Hexagonal boron nitride and 6H-SiC heterostructures

Applied Physics Letters

Volumn 102, Issue 21, 2013, Pages

  Majety, S ^a   Li, J ^a   Zhao, W P ^a   Huang, B ^b   Wei, S H ^b   Lin, J Y ^a   Jiang, H X ^a  

^a Texas Tech University   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; BORON NITRIDE; EPILAYERS; HETEROJUNCTIONS; III-V SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; ORGANIC CHEMICALS; ORGANOMETALLICS; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; SILICON; SILICON CARBIDE;

BAND-EDGE EMISSIONS; HETERO INTERFACES; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); SIC HETEROSTRUCTURES; THEORETICAL CALCULATIONS; VALENCE BAND OFFSETS; X-RAY DIFFRACTION MEASUREMENTS;

SILICON COMPOUNDS;

EID: 84879071286     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4808365     Document Type: Article

References (20)

1. Y. Kubota, K. Watanabe, O. Tsuda, and T. Taniguchi, Science 317, 932 (2007). 10.1126/science.1144216
2. T. Sugino, C. Kimura, and T. Yamamoto, Appl. Phys. Lett. 80, 3602 (2002). 10.1063/1.1477622
3. D. Pacilé, J. C. Meyer, Ç. Ö. Girit, and A. Zettl, Appl. Phys. Lett. 92, 133107 (2008). 10.1063/1.2903702
4. L. Song, L. Ci, H. Lu, P. B. Sorokin, C. Jin, J. Ni, A. G. Kvashnin, D. G. Kvashnin, J. Lou, B. I. Yakobson, and P. M. Ajayan, Nano Lett. 10, 3209 (2010). 10.1021/nl1022139
5. K. Watanabe, T. Taniguchi, and H. Kanda, Nat. Photonics 3, 591 (2009). 10.1038/nphoton.2009.167
6. A. J. Gatesman, R. H. Giles, and J. Waldman, Proc. MRS 242, 623 (1992). 10.1557/PROC-242-623
7. J. Li, S. Majety, R. Dahal, W. P. Zhao, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 101, 171112 (2012). 10.1063/1.4764533
8. S. W. King, M. French, J. Bielefeld, M. Jaehnig, M. Kuhn, and B. French, Electrochem. Solid-State Lett. 14, H478 (2011). 10.1149/2.015112esl
9. B. Huang, X. K. Cao, H. X. Jiang, J. Y. Lin, and S. H. Wei, Phys. Rev. B 86, 155202 (2012). 10.1103/PhysRevB.86.155202
10. R. Dahal, J. Li, S. Majety, B. N. Pantha, X. K. Cao, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 98, 211110 (2011). 10.1063/1.3593958
11. S. Majety, J. Li, X. K. Cao, R. Dahal, B. N. Pantha, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 101, 051110 (2012). 10.1063/1.4742194
12. S. Majety, J. Li, X. K. Cao, R. Dahal, B. N. Pantha, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 100, 061121 (2012). 10.1063/1.3682523
13. Y. Kobayashi, T. Nakamura, T. Akasaka, T. Makimoto, and N. Matsumoto, J. Cryst. Growth 298, 325 (2007). 10.1016/j.jcrysgro.2006.10.034
14. Y. Kobayashi and T. Akasaka, J. Cryst. Growth 310, 5044 (2008). 10.1016/j.jcrysgro.2008.07.010
15. K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 84, 5264 (2004). 10.1063/1.1765208
16. S. L. Rumyantsev, M. E. Levinshtein, A. D. Jackson, S. N. Mohammmad, G. L. Harris, M. G. Spencer, and M. S. Shur, in Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe, edited by, M. E. Levinshtein, S. L. Rumyantsev, and, M. S. Shur, (John Wiley and Sons, Inc., New York, 2001), pp. 67-92.
17. R. W. Lynch and H. G. J. Drickamer, J. Chem. Phys. 44, 181 (1966). 10.1063/1.1726442
18. S. L. Feng, J. Krynicki, V. Donchev, J. C. Bourgoin, M. Di Forte-Poisson, C. Brylinski, S. Delage, H. Blanck, and S. Alaya, Semicond. Sci. Technol. 8, 2092 (1993). 10.1088/0268-1242/8/12/010
19. Z. Sitar, M. J. Paisley, D. K. Smith, and R. E. Davis, Rev. Sci. Instrum. 61, 2407 (1990). 10.1063/1.1141371
20. J. Choi and J. P. Chang, J. Appl. Phys. 98, 093513 (2005). 10.1063/1.2126787