Graphene field effect transistor without an energy gap

Proceedings of the National Academy of Sciences of the United States of America

Volumn 110, Issue 22, 2013, Pages 8786-8789

  Jang, Min Seok ^a   Kim, Hyungjun ^b   Son, Young Woo ^c   Atwater, Harry A ^a   Goddard III, William A ^b,d  

^a California Institute of Technology   (United States)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Korea Institute for Advanced Study   (South Korea)

^d CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHENE;

ARTICLE; ELECTRON; ENERGY; ENGINEERING; FIELD EFFECT TRANSISTOR; GEOMETRY; PRIORITY JOURNAL;

ELECTRON OPTICS; FINITE-DIFFERENCE TIME DOMAIN; GATE GEOMETRY ENGINEERING; GRAPHENE TRANSISTOR;

COMPUTER SIMULATION; ELECTRODES; ELECTRONICS; GRAPHITE; MODELS, THEORETICAL; TRANSISTORS, ELECTRONIC;

EID: 84878430803     PISSN: 00278424     EISSN: 10916490     Source Type: Journal    
DOI: 10.1073/pnas.1305416110     Document Type: Article

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