Performance limits of transition metal dichalcogenide (MX2) nanotube surround gate ballistic field effect transistors

Journal of Applied Physics

Volumn 113, Issue 19, 2013, Pages

  Sengupta, Amretashis ^a   Mahapatra, Santanu ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC FIELD EFFECT TRANSISTORS; CARRIER EFFECTIVE MASS; DRAIN-INDUCED BARRIER LOWERING; NON-EQUILIBRIUM GREEN'S FUNCTION FORMALISM; OUTPUT CHARACTERISTICS; PEAK TRANSCONDUCTANCE; SINGLE WALL NANOTUBES; TRANSITION METAL DICHALCOGENIDES;

BALLISTICS; DENSITY FUNCTIONAL THEORY; FIELD EFFECT TRANSISTORS; MOLYBDENUM COMPOUNDS; POISSON EQUATION; TRANSITION METALS;

NANOTUBES;

EID: 84878405609     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4805059     Document Type: Article

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