AlGaN layer structures for deep UV emitters on laterally overgrown AlN/sapphire templates

Physica Status Solidi (A) Applications and Materials Science

Volumn 210, Issue 3, 2013, Pages 451-454

  Knauer, A ^a   Kueller, V ^a   Zeimer, U ^a   Weyers, M ^a   Reich, C ^b   Kneissl, M ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

AlGaN AlN; ELO AlN; MOVPE; PL; UV

Indexed keywords

ALGAN-ALN; ALN; COMPOSITIONAL VARIATION; CRITICAL LAYER THICKNESS; HIGH RESOLUTION X RAY DIFFRACTION; INTERNAL QUANTUM EFFICIENCY; PL; UV;

CRYSTALLOGRAPHY; DEFECTS; GALLIUM; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; SINGLE CRYSTALS; SOLIDS; X RAY DIFFRACTION;

ALUMINUM;

EID: 84874877996     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201200648     Document Type: Article

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