The structures of neutral transition metal doped silicon clusters, Si nX (n = 6-9; X = V, Mn)

Journal of Chemical Physics

Volumn 138, Issue 19, 2013, Pages

  Claes, Pieterjan ^a,f   Ngan, Vu Thi ^b,g   Haertelt, Marko ^c   Lyon, Jonathan T ^c,d   Fielicke, André ^c,e   Nguyen, Minh Tho ^b   Lievens, Peter ^a   Janssens, Ewald ^a  

^a KU LEUVEN   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^d CLAYTON STATE UNIVERSITY   (United States)

^e TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^f UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

^g Quy Nhon University   (Viet Nam)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE ANALYSIS; DENSITY OF STATE; DOPED SILICON; EXPERIMENTAL DATUM; INFRARED MULTIPLE PHOTON DISSOCIATIONS; INFRARED SPECTRUM; STRUCTURAL IDENTIFICATION; THEORETICAL INVESTIGATIONS;

DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; MANGANESE; MANGANESE COMPOUNDS; MASS SPECTROMETRY; MOLECULAR ORBITALS; SILICON; VANADIUM COMPOUNDS;

CRYSTAL ATOMIC STRUCTURE;

EID: 84878366646     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4803871     Document Type: Article

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