X-ray spectroscopy reveals high symmetry and electronic shell structure of transition-metal-doped silicon clusters

Physical Review A - Atomic, Molecular, and Optical Physics

Volumn 79, Issue 5, 2009, Pages

  Lau, J T ^a   Hirsch, K ^a   Klar, Ph ^a   Langenberg, A ^a   Lofink, F ^a   Richter, R ^a   Rittmann, J ^a   Vogel, M ^a   Zamudio Bayer, V ^a   Moller T ^a   Issendorff, B V ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b UNIVERSITY OF FREIBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT ATOMS; ELECTRONIC SHELL STRUCTURE; GEOMETRIC PROPERTIES; HIGH SYMMETRY; LOCAL ELECTRONIC STRUCTURES; METAL-DOPED; SHARP TRANSITION; SILICON CAGES; SILICON CLUSTERS; TRANSITION METAL ATOMS; VALENCE ELECTRON; X-RAY ABSORPTION SPECTRUM;

ABSORPTION; ATOMIC SPECTROSCOPY; ATOMS; CRYSTAL ATOMIC STRUCTURE; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; SPECTRUM ANALYSIS; STRUCTURAL METALS; TRANSITION METALS; X RAY ABSORPTION; X RAY SPECTROSCOPY;

ABSORPTION SPECTROSCOPY;

EID: 66349107676     PISSN: 10502947     EISSN: 10941622     Source Type: Journal    
DOI: 10.1103/PhysRevA.79.053201     Document Type: Article

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