SCOPUS 정보 검색 플랫폼

Volumn 134, Issue 4, 2011, Pages

Communication: Highest occupied molecular orbital-lowest unoccupied molecular orbital gaps of doped silicon clusters from core level spectroscopy

(8) Lau, J T a,b Vogel, M a,b Langenberg, A a,b Hirsch, K a,b Rittmann, J a,b Zamudio Bayer, V a,b Moller T b Von Issendorff, B c

a HAHN MEITNER INSTITUT (Germany)

b TECHNISCHE UNIVERSITÄT BERLIN (Germany)

c UNIVERSITY OF FREIBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CONVENIENT ALTERNATIVES; CORE LEVEL SPECTROSCOPY; CORE LEVELS; DOPED SILICON; HIGHEST OCCUPIED MOLECULAR ORBITAL; LOWEST UNOCCUPIED MOLECULAR ORBITAL GAP; PHOTOIONIZATION SPECTROSCOPY; SIZE-DEPENDENCE;

ENERGY GAP; MOLECULAR MODELING; PHOTOELECTRON SPECTROSCOPY; VANADIUM; VANADIUM COMPOUNDS;

MOLECULAR ORBITALS;

EID: 79551607808 PISSN: 00219606 EISSN: None Source Type: Journal
DOI: 10.1063/1.3547699 Document Type: Article

Times cited : (30)

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