Photoelectron spectroscopy of lanthanide-silicon cluster anions LnSi n- (3 ≤ n ≤ 13; Ln = Ho, Gd, Pr, Sm, Eu, Yb): Prospect for magnetic silicon-based clusters

Journal of the American Chemical Society

Volumn 131, Issue 30, 2009, Pages 10783-10790

  Grubisic, Andrej ^a   Yeon, Jae Ko ^a   Wang, Haopeng ^a   Bowen, Kit H ^a  

^a JOHNS HOPKINS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADIABATIC ELECTRON AFFINITY; BUILDING BLOCK; CLUSTER ANIONS; ELECTRONIC STABILIZATION; ELECTRONIC TRANSITION; F-ELECTRONS; LANTHANIDE; LANTHANIDE ATOMS; LANTHANIDES; OXIDATION STATE; SILICON CLUSTER ANIONS; SILICON CLUSTERS; SILICON-BASED; SIZE RANGES; VALENCE ELECTRONIC STRUCTURE;

BUILDING MATERIALS; ELECTRON AFFINITY; ELECTRONIC STRUCTURE; ELECTRONS; EUROPIUM; GADOLINIUM; HOLMIUM; MAGNETIC PROPERTIES; MAGNETISM; MATERIALS PROPERTIES; NEGATIVE IONS; OXIDATION; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; SILICON; YTTERBIUM;

PHOTOELECTRON SPECTROSCOPY;

ANION; EUROPIUM; GADOLINIUM; HOLMIUM; LANTHANIDE; PRASEODYMIUM; SAMARIUM; SILICON; YTTERBIUM;

ADIABATICITY; ARTICLE; CHEMICAL BOND; ELECTRON; ELECTRONICS; ENCAPSULATION; MAGNETISM; OXIDATION; PARTICLE SIZE; STRUCTURE ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 68049099372     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja805205r     Document Type: Article

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