Disparate effects of Cu and v on structures of exohedral transition metal-doped silicon clusters: A combined far-infrared spectroscopic and computational study

Journal of the American Chemical Society

Volumn 132, Issue 44, 2010, Pages 15589-15602

  Ngan, Vu Thi ^a   Gruene, Philipp ^b   Claes, Pieterjan ^a,c   Janssens, Ewald ^a,c   Fielicke, André ^b   Nguyen, Minh Tho ^a   Lievens, Peter ^a,c  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^c KU LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CLOSE-IN; COMPUTATIONAL STUDIES; COORDINATION SITES; CU ATOMS; D ORBITALS; DENSITY FUNCTIONAL THEORY CALCULATIONS; DOPANT ATOMS; DOPED SILICON; EXOHEDRAL; FAR INFRARED SPECTRUM; FAR-INFRARED; GROWTH MECHANISMS; GROWTH PATTERNS; INFRARED SPECTRUM; METAL-DOPED; SI ATOMS; SI CLUSTERS; SILICON ATOMS; SILICON CLUSTERS;

ADSORPTION; ATOMS; DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); ELECTRONIC STATES; ISOMERS; SPECTROSCOPY; TRANSITION METALS;

SILICON;

CATION; COPPER; SILICON; TRANSITION ELEMENT; VANADIUM;

ADSORPTION; ARTICLE; ATOM; CHEMICAL STRUCTURE; CONTROLLED STUDY; DENSITY FUNCTIONAL THEORY; ELECTRICITY; INFRARED SPECTROSCOPY; ISOMER; VIBRATION;

EID: 78149257308     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja105099u     Document Type: Article

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