Texture analysis of manganese-germanide/germanium nanowire heterostructures by high resolution electron microscopy and diffraction

Journal of Materials Research

Volumn 26, Issue 17, 2011, Pages 2299-2304

  Hemesath, E R ^a   Lensch Falk, J L ^b   Lauhon, L J ^a  

^a Northwestern University   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Nanostructure; Semiconducting; Transmission electron microscopy

Indexed keywords

GROWTH DIRECTIONS; GROWTH MECHANISMS; IN-PLANE TEXTURE; NANOWIRE HETEROSTRUCTURES; SELECTED AREA ELECTRON DIFFRACTION; SEMICONDUCTING; TEXTURE ANALYSIS; TRANSMISSION ELECTRON;

ELECTRON DIFFRACTION; GERMANIUM; HIGH RESOLUTION ELECTRON MICROSCOPY; MANGANESE; NANOSTRUCTURES; SINGLE CRYSTALS; TEXTURES; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

NANOWIRES;

EID: 84878363479     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2011.109     Document Type: Article

References (23)

1. V. Schmidt, J.V. Wittemann, S. Senz, and U. Gosele: Silicon nanowires: A review on aspects of their growth and their electrical properties. Adv. Mater. 21, 2681 (2009).
2. Y. Xia, P. Yang, Y. Sun, Y. Wu, B. Mayers, B. Gates, Y. Yin, F. Kim, and H. Yan: One-dimensional nanostructures: Synthesis, characterization, and applications. Adv. Mater. 15, 353 (2003).
3. R.S. Wagner and W.C. Ellis: Vapor-liquid-solid mechanism of single crystal growth. Appl. Phys. Lett. 4, 89 (1964).
4. A.I. Persson, M.W. Larsson, S. Stenstrom, B.J. Ohlsson, L. Samuelson, and L.R. Wallenberg: Solid-phase diffusion mechanism for GaAs nanowire growth. Nat. Mater. 3, 677 (2004).
5. J.L. Lensch-Falk, E.R. Hemesath, D.E. Perea, and L.J. Lauhon: Alternative catalysts for VSS growth of silicon and germanium nanowires. J. Mater. Chem. 19, 849 (2009).
6. C.Y. Wen, M.C. Reuter, J. Bruley, J. Tersoff, S. Kodambaka, E.A. Stach, and F.M. Ross: Formation of compositionally abrupt axial heterojunctions in silicon-germanium nanowires. Science 326, 1247 (2009).
7. J. Arbiol, B. Kalache, P.R.I. Cabarrocas, J.R. Morante, and A.F.I. Morral: Influence of Cu as a catalyst on the properties of silicon nanowires synthesized by the vapour-solid-solid mechanism. Nanotechnology 18, 30 (2007).
8. T.I. Kamins, R.S.Williams, D.P. Basile, T. Hesjedal, and J.S. Harris: Ti-catalyzed Si nanowires by chemical vapor deposition:Microscopy and growth mechanisms. J. Appl. Phys. 89, 1008 (2001).
9. K. Kang, G.H. Gu, D.A. Kim, C.G. Park, and M.H. Jo: Selforganized growth of Ge nanowires from Ni-Cu bulk alloys. Chem. Mater. 20, 6577 (2008).
10. K. Kang, D.A. Kim, H.-S. Lee, C.-J. Kim, J.-E. Yang, and M.-H. Jo: Low-temperature deterministic growth of Ge nanowires using Cu solid catalysts. Adv. Mater. (Deerfield Beach Fla.) 20, 4684 (2008).
11. J.L. Lensch-Falk, E.R. Hemesath, F.J. Lopez, and L.J. Lauhon: Vapor-solid-solid synthesis of Ge nanowires from vaporphase- deposited manganese germanide seeds. J. Am. Chem. Soc. 129, 10670 (2007).
12. B.A. Wacaser, K.A. Dick, J. Johansson, M.T. Borgstrom, K. Deppert, and L. Samuelson: Preferential interface nucleation: An expansion of the VLS growth mechanism for nanowires. Adv. Mater. 21, 153 (2009).
13. J. Arbiol, A.F.I. Morral, S. Estrade, F. Peiro, B. Kalache, P.R.I. Cabarrocas, and J.R. Morante: Influence of the (111) twinning on the formation of diamond cubic/diamond hexagonal heterostructures in Cu-catalyzed Si nanowires. J. Appl. Phys. 104, 064312 (2008).
14. Y. Wu, Y. Cui, L. Huynh, C.J. Barrelet, D.C. Bell, and C.M. Lieber: Controlled growth and structures of molecular-scale silicon nanowires. Nano Lett. 4, 433 (2004).
15. V. Schmidt, S. Senz, and U. Gosele: Diameter-dependent growth direction of epitaxial silicon nanowires. Nano Lett. 5, 931 (2005).
16. J.L. Lensch-Falk, E.R. Hemesath, and L.J. Lauhon: Syntaxial growth of Ge/Mn-germanide nanowire heterostructures. Nano Lett. 8, 2669 (2008).
17. A.L. Schmitt, J.M. Higgins, J.R. Szczech, and S. Jin: Synthesis and applications of metal silicide nanowires. J. Mater. Chem. 20, 223 (2010).
18. U.F. Kocks, C.N. Tome, and H.R. Wenk: Texture and Anisotropy: Preferred Orientations in Polycrystals and their Effect on Materials Properties. (Cambridge Univ. Press, Cambridge, UK, 1976).
19. V. Randle and O. Engler: Introduction to Texture Analysis: Macrotexture, Microtexture and Orientation Mapping. (Gordon & Breach, Amsterdam, Netherlands, 2000).
20. C.F. Cheng, V.M.C. Poon, C.W. Kok, and M. Chan: Modeling of grain growth mechanism by nickel silicide reactive grain boundary effect in metal-induced-lateral-crystallization. Electron Devices. IEEE Trans. 50, 1467 (2003).
21. C. Hayzelden and J.L. Batstone: Silicide formation and silicidemediated crystallization of nickel-implanted amorphous silicon thin films. J. Appl. Phys. 73, 8279 (1993).
22. J.-H. Park, P. Kapur, K.C. Saraswat, and H. Peng: A very low temperature single crystal germanium growth process on insulating substrate using Ni-induced lateral crystallization for threedimensional integrated circuits. Appl. Phys. Lett. 91, 143107 (2007).
23. M. Legros, G. Dehm, E. Arzt, and T.J. Balk: Observation of giant diffusivity along dislocation cores. Science 319, 1646 (2008).