Towards nanowire-based terahertz quantum cascade lasers: Prospects and technological challenges

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8640, Issue , 2013, Pages

  Krall, Michael ^a   Brandstetter, Martin ^a   Deutsch, Christoph ^a   Detz, Hermann ^a   Zederbauer, Tobias ^a   Andrews, Aaron Maxwell ^a   Schrenk, Werner ^a   Strasser, Gottfried ^a   Unterrainer, Karl ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Micropillar; Nanowire; Quantum cascade laser; Terahertz

Indexed keywords

DOUBLE-METAL WAVEGUIDE; INTERSUBBAND TRANSITIONS; MICRO PILLARS; QUANTUM CASCADE STRUCTURES; QUANTUM MECHANICAL CONFINEMENT; TECHNOLOGICAL CHALLENGES; TERA HERTZ; TERAHERTZ QUANTUM-CASCADE LASERS;

QUANTUM CASCADE LASERS; QUANTUM THEORY; SEMICONDUCTOR LASERS;

NANOWIRES;

EID: 84878321099     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.2004545     Document Type: Conference Paper

References (20)

1. Köhler, R., Tredicucci, A., Beltram, F., Beere, H.E., Linfield, E.H., Davies, A.G., Ritchie, D.A., Iotti, R.C., and Rossi, F., "Terahertz semiconductor-heterostructure laser," Nature 417, 156-159 (2002). (Pubitemid 34506792)
2. Belkin, M.A., Fan, J.A., Hormoz, S., Capasso, F., Khanna, S.P., Lachab, M., Davies, A.G., and Linfield, E.H., "Terahertz quantum cascade lasers with copper metal-metal waveguides operating up to 178 K," Opt. Express 16(5), 3242-3248 (2008). (Pubitemid 351342542)
3. Fathololoumi, S., Dupont, E., Chan, C.W.I., Wasilewski, Z.R., Laframboise, S.R., Ban, D., Mátyás, A., Jirauschek, C., Hu, Q., and Liu, H.C., "Terahertz quantum cascade lasers operating up to ~ 200 K with optimized oscillator strength and improved injection tunneling," Opt. Express 20(4), 3866-3876 (2012).
4. Hsu, C.-F., O, J.-S., Zory, P., and Botez, D., "Intersubband quantum-box semiconductor lasers," IEEE J. Sel. Top. Quant. Electron. 6(3), 491-503 (2000).
5. Zibik, E.A., Grange, T., Carpenter, B.A., Porter, N.E., Ferreira, R., Bastard, G., Stehr, D., Winnerl, S., Helm, M., Liu H.Y., Skolnick, M.S., and Wilson, L.R., "Long lifetimes of quantum-dot intersublevel transitions in the terahertz range," Nature Mater. 8, 803-807 (2009).
6. Wade, A., Fedorov, G., Smirnov, D., Kumar, S., Williams, B.S., Hu, Q., and Reno, J.L., "Magnetic-field-assisted terahertz quantum cascade laser operating up to 225 K," Nature Photon. 3, 41-45 (2009).
7. Björk, M.T., Ohlsson, B.J., Sass, T., Persson, A.I., Thelander, C., Magnusson, M.H., Deppert, K., Wallenberg, L.R., and Samuelson, L., "One-dimensional heterostructures in semiconductor nanowhiskers," Appl. Phys. Lett. 80(6), 1058-1060 (2002).
8. Gudiksen, M.S., Lauhon, L.J., Wang, J., Smith, D.C., and Lieber, C.M., "Growth of nanowire superlattice structures for nanoscale photonics and electronics," Nature 415, 617-620 (2002). (Pubitemid 34136383)
9. Wu, Y., Fan, R., and Yang, P., "Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice Nanowires," Nano Lett. 2(2), 83-86 (2002). (Pubitemid 135706268)
10. Reed, M.A., Randall, J.N., Aggarwal, R.J., Matyi, R.J., Moore, T.M., and Wetsel, A.E., "Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure," Phys. Rev. Lett. 60(6), 535-537 (1988).
11. Nobile, M., Klang, P., Mujagic, E., Detz, H., Andrews, A.M., Schrenk, W., and Strasser, G., "Quantum cascade laser utilising aluminium-free material system: InGaAs/GaAsSb lattice-matched to InP," Electron. Lett. 45(20), 1031-1033 (2009).
12. Deutsch, C., Benz, A., Detz, H., Klang, P., Nobile, M., Andrews, A.M., Schrenk, W., Kubis, T., Vogl, P., Strasser, G., and Unterrainer, K., "Terahertz quantum cascade lasers based on type II InGaAs/GaAsSb/InP," Appl. Phys. Lett. 97(26), 261110 (2010).
13. Detz, H., Andrews, A.M., Nobile, M., Klang, P., Mujagic, E., Hesser, G., Schrenk, W., Schäffler, F., and Strasser, G., "Intersubband optoelectronics in the InGaAs/GaAsSb material system," J. Vac. Sci. Technol. B 28(3), C3G19-C3G23 (2010).
14. Rathi, M.K., Tsvid, G., Khandekar, A.A., Shin, J.C., Botez, D., and Kuech, T.F., "Passivation of Interfacial States for GaAs-and InGaAs/InP-Based Regrown Nanostructures," J. Electron. Mat. 38(10), 2023-2032 (2009).
15. Deutsch, C., Krall, M., Brandstetter, M., Detz, H., Andrews, A.M., Klang, P., Schrenk, W., Strasser, G., and Unterrainer, K., "High performance InGaAs/GaAsSb terahertz quantum cascade lasers operating up to 142K," Appl. Phys. Lett. 101(21), 211117 (2012).
16. Arscott, S., Garet, F., Mounaix, P., Duvillaret, L., Coutaz, J.-L., and Lippens, D., "Terahertz time-domain spectroscopy of films fabricated from SU-8," Electron. Lett. 35(3), 243-244 (1999).
17. Tao, H., Strikwerda, A.C., Fan, K., Bingham, C.M., Padilla, W.J., Zhang, X., and Averitt, R.D., "Terahertz metamaterials on free-standing highly-flexible polyimide substrates," J. Phys. D: Appl. Phys. 41(23), 232004 (2008).
18. Podzorov, A., and Gallot, G., "Low-loss polymers for terahertz applications," Appl. Opt. 47(18), 3254-3257 (2008).
19. Perret, E., Zerounian, N., David, S., and Aniel, F., "Complex permittivity characterization of benzocyclobutene for terahertz applications," Microelectron. Eng. 85(11), 2276-2281 (2008).
20. Zhang, H., Scalari, G., Faist, J., Dunbar, L.A., and Houdré, R., "Design and fabrication technology for high performance electrical pumped terahertz photonic crystal band edge lasers with complete photonic band gap," J. Appl. Phys. 108(9), 093104 (2010).