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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 3, 2010, Pages

Intersubband optoelectronics in the InGaAs/GaAsSb material system

(9) Detz, H a Andrews, A M a Nobile, M a Klang, P a Mujagic E a Hesser, G b Schrenk, W a Schaffler F b Strasser, G a,c

a VIENNA UNIVERSITY OF TECHNOLOGY (Austria)

b JOHANNES KEPLER UNIVERSITY LINZ (Austria)

c State University of New York (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INFRARED DETECTORS; INFRARED LASERS; MATERIALS SCIENCE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTOELECTRONIC DEVICES; QUANTUM WELL INFRARED PHOTODETECTORS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SUPERLATTICES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

BAND STRUCTURE CALCULATION; EMISSION WAVELENGTH; FIT PARAMETERS; GAAS; HIGH RESOLUTION X RAY DIFFRACTION; INTER-SUBBAND; INTERSUBBAND ABSORPTION; LAYER THICKNESS; MATERIAL SYSTEMS; NOVEL MATERIAL SYSTEM; PEAK RESPONSE; ROOM TEMPERATURE; ROOM TEMPERATURE TRANSITIONS; WELL WIDTH;

QUANTUM WELL LASERS;

EID: 77953006357 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3276432 Document Type: Conference Paper

Times cited : (16)

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