A flexible IGZO thin-film transistor with stacked TiO2-based dielectrics fabricated at room temperature

IEEE Electron Device Letters

Volumn 34, Issue 6, 2013, Pages 768-770

  Hsu, Hsiao Hsuan ^a   Chang, Chun Yen ^a   Cheng, Chun Hu ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

Author keywords

High ; indium gallium zinc oxide (IGZO); thin film transistor (TFT); TiO2

Indexed keywords

C. THIN FILM TRANSISTOR (TFT); CHANNEL THICKNESS; FLEXIBLE SUBSTRATE; HIGH FIELD EFFECT MOBILITY; INDIUM-GALLIUM-ZINC OXIDES; LOW THRESHOLD VOLTAGE; SUBTHRESHOLD SWING; TIO;

GALLIUM; GATE DIELECTRICS; INDIUM; TITANIUM DIOXIDE; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 84878301747     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2258455     Document Type: Article

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