Evaluation of chemical composition and bonding features of Pt/SiO x/Pt MIM diodes and its impact on resistance switching behavior

IEICE Transactions on Electronics

Volumn E96-C, Issue 5, 2013, Pages 702-707

  Ohta, Akio ^a   Makihara, Katsunori ^b   Ikeda, Mitsuhisa ^a   Murakami, Hideki ^a   Higashi, Seiichiro ^a   Miyazaki, Seiichi ^b  

^a HIROSHIMA UNIVERSITY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

Chemical bonding features; Pt electrodes; Resistance switching; Resistive Random Access Memory (ReRAM); Si oxide

Indexed keywords

ANNEALING; CHEMICAL BONDS; PLATINUM;

CHEMICAL BONDINGS; PT ELECTRODE; RESISTANCE SWITCHING; RESISTIVE RANDOM ACCESS MEMORY (RERAM); SI OXIDE;

SWITCHING;

EID: 84878163617     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1587/transele.E96.C.702     Document Type: Article

References (18)

1. International Technology Roadmap for Semicondutor 2011: Edition Emerging Research Device.
2. I.G. Baek, M.S. Lee, S. Seo, M.J. Lee, D.H. Seo, D.-S. Suh, J.C. Park, S.O. Park, H.S. Kim, I.K. Yoo, U.-I. Chung, and J.T. Moon, "Highly scable non-volatile resistive memory using simple binary using simple binary oxide driven by asymetirc unipolar voltage pulses," IEDM Tech. Dig., pp.587-590, 2004. (Pubitemid 40928360)
3. B.J. Choi, D.S. Jeong, S.K. Kim, C. Rohde, S. Choi, J.H. Oh, H.J. Kim, C.S. Hwang, K. Szot, R. Waser, B. Reichenberg, and S. Tiedke, "Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition," J. Appl. Phys., vol. 98, 033716, 2005.
4. D.-H. Kwon, K.M. Kim, J.H. Jsng, J.M. Jeon, M.H. Lee, G.H. Kim, X.-S. Li, G.-S. Park, B. Lee, S. Han, M. Kim, and C.S. Hwang, "Atomic structure of conducting nanofilaments in TiO2 resistive switching memory," Nature Nanotechnology, vol. 5, pp.148-153, 2010.
5. S.Q. Liu, N.J. Wu, and A. Ignatieva, "Electric-pulse-induced reversible resistance change effect in magnetoresistive films," Appl. Phys. Lett., vol. 76, 2749, 2000.
6. S. Miyazaki, "Photoemission study of energy-band alignments and gap-state density distributions for high-K gate dielectrics," J. Vac. Sci. Technol. B, vol. 19, no. 6, 2212, 2001.
7. A. Barrancoa, F. Yubero, J.P. Espinos, P. Groening, and A.R. Gonzalez-Elipe, "Electronic state characterization of SiOx thin films prepared by evaporation," J. Appl. Phys., vol. 97, 113714, 2005.
8. P.S. Patil and L.D. Kadam, "Preparation and characterization of spray pyrolyzed nickel oxide (NiO) thin films," Appl. Surf. Sci., vol. 199, pp.211-221, 2002. (Pubitemid 35167718)
9. S.-G. Lim, S. Kriventsov, T.N. Jackson, J.H. Haeni, D.G. Schlom, A.M. Balbashov, R. Uecker, P. Reiche, J.L. Freeouf, and G. Lucovsky, "Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide- semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry," J. Appl. Phys., vol. 91, 4500, 2002. (Pubitemid 34435605)
10. A. Ohta, Y. Goto, S. Nishigaki, G. Wei, H. Murakami, S. Higashi, and S. Miyazaki, "Characterization of resistance-switching of si oxide dielectrics prepared by RF sputtering," IEICE Trans. Electron., vol. E95-C, no. 5, pp.879-884, May 2012.
11. S.M. Sze, Physics of semiconductor devices, 2nd ed., p.852, Willey, New Jersey, 1981.
12. R. Degraeve, G. Groeseneken, R. Bellens,M. Depas, and H.E. Maes, "A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides," IEDM Tech. Dig., pp.863-866, 1995.
13. R. Degraeve, G. Groeseneken, R. Bellens, J.L. Ogier, M. Depas, P.J. Roussel, and H.E. Maes, "New insights in the relation between electron trap generation and the statistical properties of oxide break down," IEEE Trans. Electron Devices, vol. 45, no. 4, pp.904-911, 1998.
14. J.H. Stathis, "Percolation models for gate oxide breakdown," J. Appl. Phys., vol. 86, 5757, 1999.
15. S. Miyazaki, T. Maruyama, A. Kohno, and M. Hirose, "Photoelectron yield spectroscopy of electronic states at ultrahin SiO2/Si interface," Microelectronic Engineering, vol. 48, pp.63-66, 1999. (Pubitemid 30502743)
16. J.F. Moulder, W.F. Stickle, P.E. Sobol, and K. Bomben, Handbook of X-ray Photoelectron Spectroscopy, 2nd ed., p.25, Perkin-Elmer, city of publication, 1992.
17. H.B. Michaelson, "The work function of the elements and its periodicity," J. Appl. Phys., vol. 48, 4729, 1997.
18. S. Tanuma, C.J. Powell, and D.R. Penn, "Calculations of electron inelastic mean free paths. IX. Data for 41 elemental solids over the 50 eV to 30 keV range," Surf. Interface Anal., vol. 43, pp.689-713, 2011.