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Volumn 5, Issue 10, 2013, Pages 4337-4343

Metal-insulator transition in variably doped (Bi1-xSb x)2Se3 nanosheets

(11) Lee, Chee Huei a,b He, Rui c Wang, Zhenhua a,d Qiu, Richard L J a Kumar, Ajay b Delaney, Conor c Beck, Ben c Kidd, T E c Chancey, C C c Sankaran, R Mohan b Gao, Xuan P A a

a CASE WESTERN RESERVE UNIVERSITY (United States)

b Case Western Reserve University (United States)

c UNIVERSITY OF NORTHERN IOWA (United States)

d INSTITUTE OF METAL RESEARCH (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; BISMUTH COMPOUNDS; CARRIER CONCENTRATION; CRYSTAL STRUCTURE; ELECTRIC INSULATORS; METAL INSULATOR BOUNDARIES; MICA; NANOSHEETS; QUANTUM CHEMISTRY; SELENIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR INSULATOR BOUNDARIES; SURFACE MEASUREMENT; TOPOLOGICAL INSULATORS;

BULK CONTRIBUTIONS; CHALCOGENIDE FILMS; ELECTRON CARRIER DENSITY; ELECTRONIC APPLICATION; FUNDAMENTAL STUDIES; METALLIC TRANSPORT; SYNTHESIS AND CHARACTERIZATIONS; VIBRATIONAL MODES;

METAL INSULATOR TRANSITION;

EID: 84877771800 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c3nr01155k Document Type: Article

Times cited : (35)

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