Realization of tunable Dirac cone and insulating bulk states in topological insulators (Bi1-xSbx)2Te3

Scientific Reports

Volumn 2, Issue , 2012, Pages

  Niu, Chengwang ^a   Dai, Ying ^a   Zhu, Yingtao ^a   Ma, Yandong ^a   Yu, Lin ^a   Han, Shenghao ^a   Huang, Baibiao ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84871818100     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep00976     Document Type: Article

References (38)

1. Moore, J. E. The birth of topological insulators. Nature (London) 464, 194-198 (2010).
2. Hasan, M. & Kane, C. Colloquium: Topological insulators. Rev. Mod. Phys. 82, 3045-3067 (2010).
3. Qi, X.-L. & Zhang, S.-C. Topological insulators and superconductors. Rev. Mod. Phys. 83, 1057-1110 (2011).
4. Bernevig, B. A., Hughes, T. L. & Zhang, S. C. Quantum spin Hall effect and topological phase transition in HgTe quantum wells. Science 314, 1757-1761 (2006). (Pubitemid 44969083)
5. Zhang, H. et al. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface. Nat. Phys. 5, 438-442 (2009).
6. Xia, Y. et al. Observation of a large-gap topological-insulator class with a single Dirac cone on the surface. Nat. Phys. 5, 398-402 (2009).
7. Chen, Y. L. et al. Experimental realization of a three-dimensional topological insulator, Bi2Te3. Science 325, 178-181 (2009).
8. Hsieh, D. et al. Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi2Te3 and Sb2Te3. Phys. Rev. Lett. 103, 146401 (2009).
9. Fu, L. & Berg, E. Odd-Parity Topological Superconductors: Theory and Application to CuxBi2Se3. Phys. Rev. Lett. 105, 097001 (2010).
10. Yu, R. et al. Quantized anomalous Hall effect in magnetic topological insulators. Science 329, 61-64 (2010).
11. Chen, Y. L. et al. Massive Dirac Fermion on the Surface of a Magnetically Doped Topological Insulator. Science 329, 659-662 (2010).
12. Park, K., Heremans, J., Scarola, V. & Minic, D. Robustness of Topologically Protected Surface States in Layering of Bi2Te3 Thin Films. Phys. Rev. Lett. 105, 186801 (2010).
13. Zhang, Y. et al. Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit. Nat. Phys. 6, 584-588 (2010).
14. Wray, L. A. et al. A topological insulator surface under strong Coulomb, magnetic and disorder perturbations. Nat. Phys. 7, 32-37 (2011).
15. Niu, C. et al. Mn induced ferromagnetism and modulated topological surface states in Bi2Te3. Appl. Phys. Lett. 98, 252502 (2011).
16. Hsieh, D. et al. A tunable topological insulator in the spin helical Dirac transport regime. Nature (London) 460, 1101-1105 (2009).
17. Peng, H. et al. Aharonov-Bohm interference in topological insulator nanoribbons. Nat. Mater. 9, 225-229 (2010).
18. Hor, Y. S. et al. p-type Bi2Se3 for topological insulator and low-temperature thermoelectric applications. Phys. Rev. B 79, 195208 (2009).
19. Qu, D. X., Hor, Y. S., Xiong, J., Cava, R. J. & Ong, N. P. Quantum oscillations and hall anomaly of surface states in the topological insulator Bi2Te3. Science 329, 821-824 (2010).
20. Chen, J. et al. Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi2Se3. Phys. Rev. Lett. 105, 176602 (2010).
21. Kong, D. et al. Few-layer nanoplates of Bi2Se3 and Bi2Te3 with highly tunable chemical potential. Nano. Lett. 10, 2245-2250 (2010).
22. Steinberg, H., Gardner, D. R., Lee, Y. S. & Jarillo-Herrero, P. Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3 Nanodevices. Nano. Lett. 10, 5032-5036 (2010).
23. Checkelsky, J., Hor, Y., Cava, R. & Ong, N. Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator Bi2Se3. Phys. Rev. Lett. 106, 196801 (2011).
24. Xu, S. Y. et al. Topological phase transition and texture inversion in a tunable topological insulator. Science 332, 560-564 (2011).
25. Sato, T. et al. Unexpected mass acquisition of Dirac fermions at the quantum phase transition of a topological insulator. Nat. Phys. 7, 840-844 (2011).
26. Kong, D. et al. Ambipolar field effect in the ternary topological insulator (BixSb12x)2Te3 by composition tuning. Nat. Nano. 6, 705-709 (2011).
27. Zhang, J. et al. Band structure engineering in (Bi12xSbx)2Te3 ternary topological insulators. Nat. Commun. 2, 574 (2011).
28. Ren, Z., Taskin, A., Sasaki, S., Segawa, K. & Ando, Y. Optimizing Bi22xSbxTe32ySey solid solutions to approach the intrinsic topological insulator regime. Phys. Rev. B 84, 165311 (2011).
29. Arakane, T. et al. Tunable Dirac cone in the topological insulator Bi22xSbxTe32ySey. Nat. Commun. 3, 636 (2012).
30. Thonhauser, T., Jeon, G., Mahan, G. & Sofo, J. Stress-induced defects in Sb2Te3. Phys. Rev. B 68, 205207 (2003).
31. Vegard, L. Die Konstitution der Mischkristalle und die Raumfüllung der Atome. Z. Phys. 5, 17-26 (1921).
32. Eremeev, S. V. et al. Atom-specific spin mapping and buried topological states in a homologous series of topological insulators. Nat. Commun. 3, 635 (2012).
33. Zhang, J. L. et al. Pressure-induced superconductivity in topological parent compound Bi2Te3. Proc. Natl. Acad. Sci. U. S. A. 108, 24-28 (2011).
34. Zhang, S. B. & Northrup, J. E. Chemical potential dependence of defect formation energies in GaAs: Application to Ga self-diffusion. Phys. Rev. Lett. 67, 2339-2342 (1991).
35. Hashibon, A. & Elsässer, C. First-principles density functional theory study of native point defects in Bi2Te3. Phys. Rev. B 84, 144117 (2011).
36. Hong, S. S., Cha, J. J., Kong, D. & Cui, Y. Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi2Se3 topological insulator nanoribbons. Nat. Commun. 3, 757 (2012).
37. Kresse, G. & Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169-11186 (1996).
38. Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized Gradient Approximation Made Simple. Phys. Rev. Lett. 77, 3865-3868 (1996). (Pubitemid 126631804)