Study of carrier concentration profiles in Al-implanted Ge by micro-Raman spectroscopy under different excitation wavelengths

Journal of Raman Spectroscopy

Volumn 44, Issue 5, 2013, Pages 665-669

  Sanson, A ^a   Giarola, M ^b   Napolitani, E ^a   Impellizzeri, G ^c   Privitera, V ^c   Carnera, A ^a   Mariotto, G ^b  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF VERONA   (Italy)

^c UNIVERSITY OF CATANIA   (Italy)

Author keywords

carrier concentration; Ge doping; micro Raman spectroscopy; spreading resistance profiling; substitutional atoms

Indexed keywords

ALUMINUM; GERMANIUM; LASER EXCITATION; RAMAN SPECTROSCOPY;

CONCENTRATION PROFILES; CRYSTALLINE GE; DISTRIBUTION PROFILES; EXCITATION LASERS; EXCITATION WAVELENGTH; GE-DOPING; MICRO RAMAN SPECTROSCOPY; RAMAN PEAK; SPREADING RESISTANCE PROFILING; SUBSTITUTIONAL ATOMS;

CARRIER CONCENTRATION;

EID: 84877717168     PISSN: 03770486     EISSN: 10974555     Source Type: Journal    
DOI: 10.1002/jrs.4249     Document Type: Article

References (20)

1. L. J. Van der Pauw,. Philips Res. Report, 1958; 13, 1.
2. T. Clarysse, P. De Wolf, H. Bender, W. Vandervorst,. J. Vac. Sci. Technol. B 1996; 14, 358.
3. P. H. Tan, K. Brunner, D. Bougeard, G. Abstreiter,. Phys. Rev. B 2003; 68, 125302.
4. G. Kolb, T. Salbert, G. Abstreiter,. J. Appl. Phys., 1991; 69, 3387.
5. R. Aubry, C. Dua, J. C. Jacquet, F. Lemaire, P. Galtier, B. Dessertenne, Y. Cordier, M. A. DiForte-Poisson, S. L. Delage,. Eur. Phys. J. Appl. Phys., 2004; 27, 293.
6. F. Cerdeira, M. Cardona,. Phys. Rev. B, 1972; 5, 1440.
7. L. O'Reilly, K. Horan, P. J. McNally, N. S. Bennett, N. E. B. Cowern, A. Lankinen, B. J. Sealy, R. M. Gwilliam, T. C. Q. Noakes, P. Bailey,. Apply. Phys. Lett., 2008; 92, 233506.
8. M. Becker, U. Gösele, A. Hofmann, S. Christiansen,. J. Appl. Phys., 2009; 106, 074515.
9. T. S. Perova, B. M. Armstrong, J. Wasyluk, P. Baine, P. Rainey, S. J. N. Mitchell, D. W. McNeill, H. S. Gamble, R. Hurley,. Solid St. Phenomena, 2011; 178-179, 295.
10. J. Wasyluk, P. V. Rainey, T. S. Perova, S. J. N. Mitchell, D. W. Mc-Neill, H. S. Gamble, B. M. Armstrong, R. Hurley, J. Raman, Spectr., 2011; 43, 448.
11. D. E. Aspnes, A. A. Studna, Phys. Rev. B, 1983; 27, 985.
12. A. Sanson, E. Napolitani, G. Impellizzeri, M. Giarola, D. De Salvadora, V. Privitera, F. Priolo, G. Mariotto, A. Carnera,. Thin Solid Films, in print.
13. E. Napolitani, et al,., unpublished results.
14. G. Impellizzeri,., E. Napolitani1, S. Boninelli, V. Privitera, T. Clarysse, W. Vandervorst, F. Priolo,. Appl. Phys. Express, 2012; 5, 021301.
15. J. Kim, S. W. Bedell, D. K. Sadana,. Appl. Phys. Lett., 2011; 98, 082112.
16. H. Richter, Z.P. Wang, L. Ley,. Solid St. Comm., 1981; 39, 625.
17. F. Cerdeira, C. J. Buchenauer, F. H. Pollak, M. Cardona,. Phys. Rev. B, 1972; 5, 580.
18. L. Romano, R. De Bastiani, C. Miccoli, G. Bisognin, E. Napolitani, D. De Salvador, M.G. Grimaldi,. Mat. Science and Engin. B, 2006; 135, 220.
19. G. Bisognin, S. Vangelista, M. Berti, G. Impellizzeri, M. G. Grimaldi,. J. Appl. Phys., 2010; 107, 103512.
20. C. Y. Peng, C. F. Huang, Y. C. Fu, Y. H. Yang, C. Y. Lai, S. T. Chang, C. W. Liu,. J. Appl. Phys., 2009; 105, 083537.