Temperature measurement by micro-Raman scattering spectroscopy in the active zone of AlGaN/GaN high-electron-mobility transistors

EPJ Applied Physics

Volumn 27, Issue 1-3, 2004, Pages 293-296

  Aubry, R ^a   Dua, C ^a   Jacquet, J C ^a   Lemaire, F ^a   Galtier, P ^a   Dessertenne, B ^a   Cordier, Y ^b   Diforte Poisson, M A ^a   Delage, S L ^a  

^a THALES RESEARCH AND TECHNOLOGY   (France)

^b CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; RELIABILITY; TEMPERATURE MEASUREMENT; THERMAL DIFFUSION; THERMAL EFFECTS; TOPOLOGY;

JUNCTION MOBILITY; RADIO FREQUENCY DEVICES; RAMAN SCATTERING SPECTROSCOPY; TEMPERATURE VARIATION;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 10244227838     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2004055     Document Type: Conference Paper

References (4)

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3. M. Kumball, S. Rajsingam, A. Sarua, M. J. Uren, T. Martin, B. T. Hughes, K. P. Hilton, R. S. Balmer, Appl. Phys. Lett. 82, 124 (2003)
4. M. Kumball, J. M. Hayes, M. J. Uren, T. Martin, J. C. H. Birbeck, R. S. Balmer, B. T. Hughes, IEEE Electron Device Lett. 23, 7 (2002)