Substitutional and clustered B in ion implanted Ge: Strain determination

Journal of Applied Physics

Volumn 107, Issue 10, 2010, Pages

  Bisognin, G ^a   Vangelista, S ^a   Berti, M ^a   Impellizzeri, G ^b   Grimaldi, M G ^b  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

B ATOMS; HIGH-RESOLUTION X-RAY DIFFRACTION; HRXRD; ION IMPLANTED; LATTICE STRAIN; POSITIVE VALUE;

GERMANIUM; X RAY DIFFRACTION;

X RAY DIFFRACTION ANALYSIS;

EID: 77953002350     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3427563     Document Type: Article

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