Magnetic-field-controlled reconfigurable semiconductor logic

Nature

Volumn 494, Issue 7435, 2013, Pages 72-76

  Joo, Sungjung ^a,b   Kim, Taeyueb ^a,b   Shin, Sang Hoon ^a   Lim, Ju Young ^b   Hong, Jinki ^a   Song, Jin Dong ^a   Chang, Joonyeon ^a   Lee, Hyun Woo ^c   Rhie, Kungwon ^b   Han, Suk Hee ^a   Shin, Kyung Ho ^a   Johnson, Mark ^d  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

^c Pohang University of Science and Technology (POSTECH)   (South Korea)

^d NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC MATERIAL; METAL OXIDE;

COMPUTER SIMULATION; ELECTRIC FIELD; MAGNETIC FIELD; SEMICONDUCTOR INDUSTRY; SIGNAL-TO-NOISE RATIO;

ARTICLE; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD; INTEGRATED CIRCUIT; MAGNETIC FIELD; MAGNETISM; PRIORITY JOURNAL; ROOM TEMPERATURE; SEMICONDUCTOR; STATIC ELECTRICITY;

EID: 84877693280     PISSN: 00280836     EISSN: 14764687     Source Type: Journal    
DOI: 10.1038/nature11817     Document Type: Article

References (21)

1. Moodera, J. S. & Leclair, P. Spin electronics: a quantum leap. Nature Mater. 2, 707-708 (2003).
2. Ney, A., Pampuch, C., Koch, R. & Ploog, K. H. Programmable computing with a single magnetoresistive element. Nature 425, 485-487 (2003).
3. Dery, H., Dalal, P., Cywinski, L. & Sham, L. J. Spin-based logic in semiconductors for reconfigurable large-scale circuits. Nature 447, 573-576 (2007).
4. Xu, P. et al. An all-metallic logic gate based on current-driven domain wall motion. Nature Nanotechnol. 3, 97-100 (2008).
5. Behin-Aein, B., Datta, B. D., Salahuddin, S. & Datta, S. Proposal for an all-spin logic device with built-in memory. Nature Nanotechnol. 5, 266-270 (2010).
6. Delmo, M. et al. Large positive magnetoresistive effect in silicon induced by the space-charge effect. Nature 457, 1112-1115 (2009).
7. Wan, C. et al. Geometrical enhancement of low-field magnetoresistance in silicon. Nature 477, 304-307 (2011).
8. Lee, J. et al.Anelectricalswitching device controlledby amagnetic field-dependent impact ionization process. Appl. Phys. Lett. 97, 253505 (2010).
9. Hong, J. et al. Magnetic field dependent impact ionization in InSb. Preprint at http://arxiv.org/abs/1206.1094v1 (2012).
10. Schoonus, J. J. H. M., Bloom, F. L., Wagemans, W., Swagten, H. J. M. & Koopmans, B. Extremely large magnetoresistance in boron-doped silicon. Phys. Rev. Lett. 100, 127202 (2008).
11. Delmo, M. P., Kasai, S., Kobayashi, K. & Ono, T. Current-controlled magnetoresistance in silicon in non-Ohmic transport regimes. Appl. Phys. Lett. 95, 132106 (2009).
12. Ciccarelli, C., Park, B. G., Ogawa, S., Ferguson, A. J. & Wunderlich, J. Gate controlled magnetoresistance in a silicon metal-oxide-semiconductor field-effect-transistor. Appl. Phys. Lett. 97, 082106 (2010).
13. Sze, S. M. Semiconductor Devices, Physics and Technology 2nd edn, 78, 118 (Wiley and Sons, 2002).
14. Chovet, A. Study of recombination processes from the magnetoconcentration effect. Phys. Status Solidi A 28, 633-645 (1975).
15. Cristoloveanu, S. & Lee, J. H. Magnetoconcentration and related galvanomagnetic effects in non-intrinsic semiconductors. J. Phys. C 13, 5983-5997 (1980).
16. Fulling, S. A., Sinyakov, M. N. & Tischchenko, S. V. Linearity and the Mathematics of Several Variables 343 (World Scientific, 2000).
17. Massey, D. J. et al. Impact ionization in submicron silicon devices. J. Appl. Phys. 95, 5931-5933 (2004).
18. Xie, J. J. et al. Excess noise characteristics of thin AlAsSb APDs. IEEE Trans. Electron. Dev. 59, 1475-1479 (2012).
19. Hong, J. et al. Local Hall effect in hybrid ferromagnetic/semiconductor devices. Appl. Phys. Lett. 90, 023510 (2007).
20. Hosomi, M. et al. A novel nonvolatile memory with spin torque transfer magnetization switching: spin-RAM. In Proc. Electron Devices Meeting, 2005 459-462 (IEDM Technical Digest, IEEE International, 2005).
21. Lim, J. Y., Song, J. D., Ahn, J.-P., Rho, H. & Yang, H. S. Effect of thin intermediate-layer of InAs quantum dots on the physical properties of InSb films grown on (001) GaAs. Thin Solid Films 520, 6589-6594 (2012).