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Journal of Applied Physics

Volumn 113, Issue 16, 2013, Pages

Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires

(6) Pusep, Yu A a Arakaki, H a De Souza, C A a Rodrigues, A D b Haapamaki, C M c Lapierre, R R c

a UNIVERSITY OF SÃO PAULO (Brazil)

b FEDERAL UNIVERSITY OF SÃO CARLOS (Brazil)

c MCMASTER UNIVERSITY (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

HETERO INTERFACES; OPTICAL CHARACTERIZATION; PHOTOEXCITED ELECTRONS; PHOTOLUMINESCENCE LINES; RADIATIVE RECOMBINATION; RAMAN SCATTERING MEASUREMENTS; STRUCTURAL AND OPTICAL PROPERTIES; WURTZITE PHASE;

ALUMINUM GALLIUM ARSENIDE; GALLIUM ARSENIDE; NANOWIRES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SHELLS (STRUCTURES); TRANSMISSION ELECTRON MICROSCOPY;

ZINC SULFIDE;

EID: 84877302937 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4803494 Document Type: Article

Times cited : (8)

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