Optical and electrical properties of the different magnetron sputter power 300°C deposited Ga2O3 -ZnO thin films and applications in p-i-n α -Si:H thin-film solar cells

International Journal of Photoenergy

Volumn 2013, Issue , 2013, Pages

  Wang, Fang Hsing ^a   Huang, Chia Cheng ^a   Yang, Cheng Fu ^b   Tzeng, Hua Tz ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; CARRIER CONCENTRATION; ENERGY GAP; II-VI SEMICONDUCTORS; LIGHT TRANSMISSION; MAGNETRON SPUTTERING; OPTICAL FILMS; OPTICAL LATTICES; SILICON COMPOUNDS; SILICON SOLAR CELLS; THIN FILM SOLAR CELLS; THIN FILMS; TRANSPARENT ELECTRODES; ZINC OXIDE;

BLUE SHIFT; DEPOSITION POWER; G-VALUES; GZO THIN FILMS; OPTICAL AND ELECTRICAL PROPERTIES; POWER; RADIO-FREQUENCY MAGNETRON SPUTTERING SYSTEM; SI:H THIN FILM; TRANSMISSION SPECTRUMS; ZNO THIN FILM;

GALLIUM COMPOUNDS;

EID: 84877260998     PISSN: 1110662X     EISSN: 1687529X     Source Type: Journal    
DOI: 10.1155/2013/270389     Document Type: Article

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