UV enhanced field emission for β-Ga2O3 nanowires

IEEE Electron Device Letters

Volumn 34, Issue 5, 2013, Pages 701-703

  Wu, Y L ^a   Chang, Shoou Jinn ^a   Liu, C H ^d   Weng, Wen Yin ^b   Tsai, Tsung Ying ^a   Hsu, Cheng Liang ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

^c NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

^d NONE

Author keywords

Ga2O3; field emission; nanowires; UV irradiation

Indexed keywords

ENHANCED FIELD EMISSION; FIELD ENHANCEMENT FACTOR; MONOCLINIC STRUCTURES; NANOWIRES (NWS); TURN-ON FIELD; ULTRAVIOLET IRRADIATIONS; UV IRRADIATION; VAPOR-LIQUID-SOLID GROWTH;

FIELD EMISSION; NANOWIRES; VAPORS;

GALLIUM;

EID: 84876977331     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2254105     Document Type: Article

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