Selector-less RRAM with non-linearity of device for cross-point array applications

Microelectronic Engineering

Volumn 109, Issue , 2013, Pages 360-363

  Woo, Jiyong ^a   Lee, Daeseok ^a   Choi, Godeuni ^a   Cha, Euijun ^a   Kim, Seonghyun ^b   Lee, Wootae ^b   Park, Sangsu ^b   Hwang, Hyunsang ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Cross point array; RRAM; Selector

Indexed keywords

BI-LAYER STRUCTURE; CONTROLLING OPERATIONS; CROSS-POINT ARRAY; LOW-RESISTANCE STATE; NONLINEAR CHARACTERISTICS; RESISTIVE SWITCHING; RRAM; SELECTOR;

MAGNETIC MATERIALS;

MICROELECTRONICS;

EID: 84876955662     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2013.03.130     Document Type: Article

References (12)

1. R. Waser, and M. Aono Nat. Mater. 6 2007 833
2. J.R. Heath, P.J. Kuekes, G.S. Snider, and R.S. Wiliams Science 280 1998 1716 1721
3. M.-J. Lee, Y. Park, B.-S. Kang, S.-E. Ahn, C. Lee, K. Kim, W. Xianyu, G. Stefanovich, J.-H. Lee, S.-J. Chung, Y.-H. Kim, C.-S. Lee, J.-B. Park, I.-G. Baek, I.-K. Yoo, in: IEEE Int. Electron Devices Meet. 2007, 2007, p. 771.
4. A. Kawahara, R. Azuma, Y. Ikeda, K. Kawai, Y. Katoh, K. Tanabe, T. Nakamura, Y. Sumimoto, N. Hayakawa, K. Tsuji, S. Yoneda, T. Takagi, T. Mikawa, K. Aono, ISSCC Dig. Tech. Papers, Feb. 2012, pp. 432-433.
5. J.-J. Huang, Y.-M. Tseng, C.-W. Hsu, and T.-H. Hou IEEE Electron Device Lett. 31 10 2011
6. M.-J. Lee, D. Lee, H. Kim, H.-S. Choi, J.-B. Park, H.G. Kim, Y.-K. Cha, U.-I. Chung, I.-K. Yoo, K. Kim, in: IEEE Int. Electron Devices Meet. 2012, 2012, p. 33.
7. J.J. Yang, M.-X. Zhang, M.D. Pickett, F. Miao, J.P. Strachan, W. Li, W. Yi, D.A. Ohlberg, B.J. Choi, W. Wu, J.H. Nickel, G.M. Ribeiro, and R.S. Williams Appl. Phys. Lett. 100 2012 113501
8. T.-S. Yang, C.-B. Shiu, and M.-S. Wong Surf. Sci. 548 2004 75 82
9. H.D. Lee, S.G. Kim, K. Cho, H. Hwang, H. Choi, J. Lee, S.H. Lee, H.J. Lee, J. Suh, S.-O. Chung, Y.S. Kim, K.S. Kim, W.S. Nam, J.T. Cheong, J.T. Kim, S. Chae, E.-R. Hwang, S.N. Park, Y.S. Sohn, C.G. Lee, H.S. Shin, K.J. Lee, K. Hong, H.G. Jeong, K.M. Rho, Y.K. Kim, S. Chung, J. Nickel, J.J. Yang, H.S. Cho, F. Perner, R.S. Williams, J.H. Lee, S.K. Park, S.-J. Hong, in: VLSI symp. Tech. Dig. 2012, pp. 151-152.
10. J. Lee, E.M. Bourim, W. Lee, J. Park, M. Jo, S. Jung, J. Shin, and H. Hwang Appl. Phys. Lett. 97 2010 172105
11. U. Russo, D. Ielmini, C. Cagli, and A.L. Lacaita IEEE Trans. Electron Devices 56 2 2009 193 200
12. G. Dearnaley, A.M. Stoneham, and D.V. Morgan Rep. Prog. Phys. 33 3 1970 1129 1191