Effect of electrode materials on the scaling behavior of energy density in Pb(Zr 0.96Ti 0.03)Nb 0.01O 3 antiferroelectric films

Applied Physics Letters

Volumn 101, Issue 11, 2012, Pages

  Ge, Jun ^a   Pan, Gang ^a   Remiens, Denis ^b   Chen, Ying ^a   Cao, Fei ^a   Dong, Xianlin ^a   Wang, Genshui ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI FERROELECTRICS; ANTIFERROELECTRIC FILMS; BOTTOM ELECTRODES; DEPOLARIZATION FIELDS; ELECTRODE MATERIAL; ENERGY DENSITY; NON-UNIFORM STRAIN; PT(111); SCALING BEHAVIOR; SCALING RELATIONS; SI SUBSTRATES;

COBALT COMPOUNDS; LEAD; PLATINUM; SCALING LAWS; SILICON; SOL-GEL PROCESS; ZIRCONIUM;

ANTIFERROELECTRICITY;

EID: 84866309155     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4752726     Document Type: Article

References (22)

1. B. M. Xu, P. Moses, N. G. Pal, and L. E. Cross, Appl. Phys. Lett. 72 (5), 593 (1998). 10.1063/1.120817
2. W. Y. Pan, C. Q. Dam, Q. M. Zhang, and L. E. Cross, J. Appl. Phys. 66 (12), 6014 (1989). 10.1063/1.343578
3. J. Parui and S. B. Krupanidhi, Appl. Phys. Lett. 92 (19), 192901 (2008). 10.1063/1.2928230
4. M. S. Mirshekarloo, K. Yao, and T. Sritharan, Appl. Phys. Lett. 97 (14), 142902 (2010) 10.1063/1.3497193.
5. Y. W. So, D. J. Kim, T. W. Noh, J. G. Yoon, and T. K. Song, Appl. Phys. Lett. 86 (9), 092905 (2005). 10.1063/1.1870126
6. R. Yimnirun, Y. Laosiritaworn, S. Wongsaenmai, and S. Ananta, Appl. Phys. Lett. 89 (16), 162901 (2006) 10.1063/1.2363143.
7. X. Chen, F. Cao, H. Zhang, G. Yu, G. Wang, X. Dong, Y. Gu, H. He, and Y. Liu, J. Am. Ceram. Soc. 95 (4), 1163 (2012). 10.1111/j.1551-2916.2012.05070.x
8. J. W. Zhai, M. H. Cheung, K. X. Zheng, L. Xin, H. D. Chen, E. V. Colla, and T. B. Wu, Appl. Phys. Lett. 81 (19), 3621 (2002). 10.1063/1.1519944
9. J. W. Li, H. Kameda, B. N. Q. Trinh, T. Miyasako, P. T. Tue, E. Tokumitsu, T. Mitani, and T. Shimoda, Appl. Phys. Lett. 97 (10), 102905 (2010) 10.1063/1.3486462.
10. M. J. Lefevre, J. S. Speck, R. W. Schwartz, D. Dimos, and S. J. Lockwood, J. Mater. Res. 11 (8), 2076 (1996). 10.1557/JMR.1996.0261
11. S. S. Sengupta, D. Roberts, J. F. Li, M. C. Kim, and D. A. Payne, J. Appl. Phys. 78 (2), 1171 (1995). 10.1063/1.360353
12. F. Gao, X. L. Dong, C. L. Mao, W. Liu, H. L. Zhang, L. H. Yang, F. Cao, and G. S. Wang, J. Am. Ceram. Soc. 94 (12), 4382 (2011). 10.1111/j.1551-2916. 2011.04731.x
13. X. F. Chen, X. L. Dong, H. L. Zhang, G. Yu, F. Cao, and G. S. Wang, Solid State Commun. 150 (15-16), 720 (2010). 10.1016/j.ssc.2010.01.034
14. A. R. Chaudhuri, M. Arredondo, A. Hahnel, A. Morelli, M. Becker, M. Alexe, and I. Vrejoiu, Phys. Rev. B 84 (5), 054112 (2011) 10.1103/PhysRevB.84. 054112.
15. P. Ayyub, S. Chattopadhyay, R. Pinto, and M. S. Multani, Phys. Rev. B 57 (10), R5559 (1998). 10.1103/PhysRevB.57.R5559
16. J. W. Zhai and H. D. Chen, Appl. Phys. Lett. 83 (5), 978 (2003). 10.1063/1.1594843
17. M. D. Glinchuk, B. Y. Zaulychny, and V. A. Stephanovich, Phys. Solid State 47 (7), 1331 (2005). 10.1134/1.1992614
18. M. D. Glinchuk, B. Y. Zaulychny, and V. A. Stephanovich, Ferroelectrics 316, 1 (2005). 10.1080/00150190590963057
19. F. Chen, Q. Z. Liu, H. F. Wang, F. H. Zhang, and W. B. Wu, Appl. Phys. Lett. 90 (19), 192907 (2007) 10.1063/1.2737912.
20. A. Wold, B. Post, and E. Banks, J. Am. Chem. Soc. 79 (18), 4911 (1957). 10.1021/ja01575a022
21. K. P. Rajeev, G. V. Shivashankar, and A. K. Raychaudhuri, Solid State Commun. 79 (7), 591 (1991). 10.1016/0038-1098(91)90915-I
22. Y. Watanabe, Phys. Rev. B 59 (17), 11257 (1999). 10.1103/PhysRevB.59. 11257