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Advanced Materials

Volumn 24, Issue 12, 2012, Pages 1610-1615

Epitaxial ferroelectric heterostructures fabricated by selective area epitaxy of SrRuO 3 using an MgO mask

(3) Karthik, J a Damodaran, Anoop R a Martin, Lane W a

a University of Illinois at Urbana Champaign (United States)

Author keywords

dielectric materials; epitaxial heterostructures; ferroelectrics; hard mask; PbZr 0.2Ti 0.8O 3

Indexed keywords

EPITAXIAL FERROELECTRIC; FATIGUE PROPERTIES; FERROELECTRIC THIN-FILM CAPACITORS; HARD MASKS; HIGH TEMPERATURE; HIGH TEMPERATURE STABILITY; LOW LEAKAGE; MGO; PBZR 0.2TI 0.8O 3; SELECTIVE AREA EPITAXY; SELECTIVE WET ETCHING; TEMPERATURE STABLE;

DIELECTRIC MATERIALS; FERROELECTRIC MATERIALS; FERROELECTRICITY; HETEROJUNCTIONS; THIN FILM CIRCUITS;

EPITAXIAL GROWTH;

LEAD; MAGNESIUM OXIDE; OXIDE; RUTHENIUM DERIVATIVE; TITANIUM; ZIRCONIUM;

ARTICLE; CHEMISTRY; ELECTRICITY; LASER; X RAY DIFFRACTION;

ELECTRICITY; LASERS; LEAD; MAGNESIUM OXIDE; OXIDES; RUTHENIUM COMPOUNDS; TITANIUM; X-RAY DIFFRACTION; ZIRCONIUM;

EID: 84858434986 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201104697 Document Type: Article

Times cited : (65)

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