P-channel field-effect transistors based on C60 doped with molybdenum trioxide

ACS Applied Materials and Interfaces

Volumn 5, Issue 7, 2013, Pages 2337-2341

  Lee, Tae Hoon ^a   Lüssem, Björn ^a,b   Kim, Kwanpyo ^a   Giri, Gaurav ^a   Nishi, Yoshio ^a   Bao, Zhenan ^a  

^a Stanford University   (United States)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

C60; coevaporation; doping; fullerene; molybdenum trioxide; p channel field effect transistors

Indexed keywords

C60; CHARGE TRANSFER DOPING; CO-EVAPORATIONS; DEVICE PERFORMANCE; DOPING CONCENTRATION; MOLYBDENUM TRIOXIDE; N-CHANNEL ORGANIC SEMICONDUCTORS; ON/OFF RATIO;

CHARGE TRANSFER; DOPING (ADDITIVES); FULLERENES; MOLYBDENUM OXIDE; NANOBELTS;

FIELD EFFECT TRANSISTORS;

EID: 84876154837     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am3026568     Document Type: Article

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