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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2242-2244

Next generation defect characterization in nitride HEMTs

(7) Arehart, A R a Malonis, A C a,c Poblenz, C b,d Pei, Y b,e Speck, J S b Mishra, U K b Ringel, S A a

a The Ohio State University (United States)

b UNIVERSITY OF CALIFORNIA (United States)

c 4Power LLC (United States)

d Soraa (United States)

e Dynax Semiconductor (China)

Author keywords

Defects; DLOS; DLTS; HEMT; Passivation; Silicon nitride

Indexed keywords

ALGAN/GAN HEMTS; DEEP LEVEL; DEFECT CHARACTERIZATION; DEVICE PERFORMANCE; DLOS; DRAIN RESISTANCES; LATERAL RESOLUTION; OPTICAL SPECTROSCOPY; SPATIAL RESOLUTION; UNDER-GATE;

DEFECTS; DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM NITRIDE; IMPACT RESISTANCE; PASSIVATION; POWER QUALITY; SILICON NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79960741704 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.201000955 Document Type: Article

Times cited : (38)

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