Impact of interface traps on the IV curves of InAs Tunnel-FETs and MOSFETs: A full quantum study

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Pala, M G ^a   Esseni, D ^b   Conzatti, F ^a,b  

^a IMEP LAHC   (France)

^b UNIVERSITY OF UDINE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL STUDIES; INTERFACE TRAPS; IV CHARACTERISTICS; PHONON ASSISTED TUNNELING; QUANTUM STUDY; QUANTUM TRANSPORT MODELS; SUBTHRESHOLD; TEMPERATURE DEPENDENCE;

ELECTRON DEVICES; NANOWIRES; QUANTUM ELECTRONICS;

MOSFET DEVICES;

EID: 84876102329     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6478992     Document Type: Conference Paper

References (17)

1. ITRS Roadmap 2011: www.itrs.net/Links/2011ITRS.
2. G. Dewey et al. in in IEDM Proceedings p. 785, 2011.
3. J. Knoch et al. in IEEE EDL vol. 31, p. 305, 2010.
4. F. Conzatti et al. in in IEDM Proceedings, p. 5.2.1, 2011.
5. F. Conzatti et al. in IEEE TED, vol. 59, p. 2085, 2012.
6. M. Passlack et al. in IEEE TED, vol. 57, p. 2944, 2010.
7. L. Lin et al. in Appl. Phys. Lett. vol. 98, p. 082903, 2011.
8. T.B. Bahder et al. in Phys. Rev. B vol. 41, p. 11992, 2009.
9. M. Shin in J. Appl. Phys. vol. 106, p. 054505, 2009.
10. S. Poli et al. in IEEE EDL vol. 30, p. 1212, 2009.
11. M. Luisier et al. in J. Appl. Phys. vol. 107, p. 084507, 2010.
12. S.O. Koswatta et al. in Appl. Phys. Lett. vol. 92, p. 043125, 2008.
13. T.H. Ning et al. in Phys. Rev. B vol. 6, p. 4605, 1972.
14. S. Poli et al. in IEEE TED vol. 55, p. 313, 2008.
15. F. Conzatti et al. in IEEE EDL vol. 33, p. 806, 2012.
16. M.V. Fischetti et al. in IEEE TED vol. 38, p. 634, 1991.
17. I. Vurgaftman et al. in J. Appl. Phys. vol. 89, p. 5815, 2001.