Crystallographic properties and elemental migration in two-stage prepared CuIn1-xAlxSe2 thin films for photovoltaic applications

Journal of Alloys and Compounds

Volumn 566, Issue , 2013, Pages 180-186

  Aninat, Rémi ^a,c   Zoppi, Guillaume ^a   Tempez, Agnès ^b   Chapon, Patrick ^b   Beattie, Neil S ^a   Miles, Robert ^a   Forbes, Ian ^a  

^a NORTHUMBRIA UNIVERSITY   (United Kingdom)

^b HORIBA Jobin Yvon Inc   (United States)

^c LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY   (Luxembourg)

Author keywords

Semiconductors; Thin films; Vapour deposition; X ray diffraction

Indexed keywords

CHALCOPYRITE STRUCTURES; CRYSTALLOGRAPHIC PROPERTIES; GLOW-DISCHARGE OPTICAL EMISSION SPECTROSCOPY; PHOTOVOLTAIC ABSORBERS; PHOTOVOLTAIC APPLICATIONS; PRECURSOR COMPOSITION; TIME OF FLIGHT MASS SPECTROMETRY; VAPOUR DEPOSITION;

CHEMICAL PROPERTIES; COPPER COMPOUNDS; EMISSION SPECTROSCOPY; GLOW DISCHARGES; MASS SPECTROMETRY; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; THIN FILMS; X RAY DIFFRACTION;

ALUMINUM;

EID: 84875938529     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2013.03.091     Document Type: Article

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