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Volumn 5, Issue 12, 2012, Pages 9914-9921

Cu(In,Ga)Se2 thin films without Ga segregation prepared by the single-step selenization of sputter deposited Cu-In-Ga-Se precursor layers

(8) Ahn, Sejin a Moon, Dong Gwon a Yun, Jae Ho a Gwak, Jihye a Ahn, Seungkyu a Cho, Ara a Shin, Keeshik a Yoon, Kyunghoon a

a Korea Institute of Energy Research (KIER) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBING LAYERS; COVALENTLY BONDED; CU(IN , GA)SE; DEVICE EFFICIENCY; OPEN CIRCUIT POTENTIAL; PRECURSOR FILMS; PRECURSOR LAYER; SELENIZATION; SINGLE-STEP; THIN FILM SOLAR CELLS;

CONVERSION EFFICIENCY; COPPER; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS; THIN FILMS;

GALLIUM;

ABSORPTION; BIOFILM; FUEL CELL; METAL; SELENITE;

EID: 84870946278 PISSN: 17545692 EISSN: 17545706 Source Type: Journal
DOI: 10.1039/c2ee22804a Document Type: Article

Times cited : (34)

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