Depth-profile analysis of thermoelectric layers on Si wafers by pulsed r.f. glow discharge time-of-flight mass spectrometry

Spectrochimica Acta - Part B Atomic Spectroscopy

Volumn 76, Issue , 2012, Pages 175-180

  Reinsberg, K G ^a   Schumacher, C ^a   Tempez, A ^b   Nielsch, K ^a   Broekaert, J A C ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

^b HORIBA LTD   (Japan)

Author keywords

Depthprofiling; Pulsed r.f. glow discharge; Thermoelectrics; Time of flight mass spectrometry

Indexed keywords

COMPONENT CONCENTRATION; DEPTH RESOLUTION; DEPTH-PROFILE ANALYSIS; DIRECT SOLID ANALYSIS; ENERGY DISPERSIVE X-RAY FLUORESCENCE SPECTROMETRIES; HOMOGENEOUS DEPOSITION; INDUCTIVELY COUPLED PLASMA-OPTICAL EMISSION SPECTROMETRY; QUANTITATIVE RESULT; RADIOFREQUENCY GLOW DISCHARGES; SEM-EDX; SI WAFER; SPUTTERING RATE; STANDARD DEVIATION; THERMOELECTRIC LAYERS; THERMOELECTRIC MATERIAL; THERMOELECTRICS; TIME OF FLIGHT MASS SPECTROMETRY;

DEPTH PROFILING; ENERGY DISPERSIVE SPECTROSCOPY; FLUORESCENCE SPECTROSCOPY; GLOW DISCHARGES; GOLD DEPOSITS; INDUCTIVELY COUPLED PLASMA; MASS SPECTROMETERS; OPTICAL EMISSION SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON; SILICON WAFERS; STOICHIOMETRY; THERMOELECTRICITY;

FACTOR ANALYSIS;

EID: 84867405052     PISSN: 05848547     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sab.2012.06.005     Document Type: Article

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