Large-area CMOS SPADs with very low dark counting rate

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8631, Issue , 2013, Pages

  Bronzi, D ^a   Villa, F ^a   Bellisai, S ^a   Tisa, S ^b   Tosi, A ^a   Ripamonti, G ^a   Zappa, F ^a,b   Weyers, S ^c   Durini, D ^c   Brockherde, W ^c   Paschen, U ^c  

^a POLITECNICO DI MILANO   (Italy)

^b Micro Photon Devices Srl   (Italy)

^c FRAUNHOFER INSTITUTE FOR MICROELECTRONIC CIRCUITS AND SYSTEMS   (Germany)

Author keywords

complementary metal oxide semiconductor; photodetectors; photon counting; Single photon avalanche photodiode

Indexed keywords

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; NEAR ULTRAVIOLET; PHOTON COUNTING; PHOTON DETECTION EFFICIENCY (PDE); ROOM TEMPERATURE; SCALED TECHNOLOGIES; SINGLE PHOTON AVALANCHE DIODE; SINGLE-PHOTON AVALANCHE PHOTODIODES;

CMOS INTEGRATED CIRCUITS; NANOPHOTONICS;

PHOTODETECTORS;

EID: 84875795939     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.2004209     Document Type: Conference Paper

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