Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors

Applied Physics Letters

Volumn 102, Issue 11, 2013, Pages

  Kotlyar, R ^a   Avci, U E ^a   Cea, S ^a   Rios, R ^a   Linton, T D ^a   Kuhn, K J ^a   Young, I A ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENGINEERING; BANDGAP TRANSITION; EMPIRICAL PSEUDOPOTENTIAL METHOD; LOW DENSITY; ON CURRENTS; SN CONTENTS; SUBTHRESHOLD OPERATION; TUNNELING FIELD-EFFECT TRANSISTORS;

ENERGY GAP; GERMANIUM; TIN;

TUNNELS;

EID: 84875729480     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4798283     Document Type: Article

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