Characterization of low dark-current lateral amorphous-selenium metal-semiconductor-metal photodetectors

IEEE Sensors Journal

Volumn 13, Issue 5, 2013, Pages 1452-1458

  Abbaszadeh, Shiva ^a   Allec, Nicholas ^a   Karim, Karim S ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

Amorphous selenium (a Se); indirect conversion X ray imaging; metal semiconductor metal (MSM) photodetector

Indexed keywords

AMORPHOUS SELENIUM; CONE-BEAM COMPUTED TOMOGRAPHY; DEVICE OPTIMIZATION; HIGH SIGNAL-TO-NOISE RATIO; MEDICAL X-RAY IMAGING; METAL SEMICONDUCTOR METAL PHOTODETECTOR; REAL-TIME FLUOROSCOPY; XRAY IMAGING;

DARK CURRENTS; DIGITAL DEVICES; EXPERIMENTS; FADING (RADIO); PHOTODETECTORS; PHOTONS; POLYIMIDES; SELENIUM;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84875714773     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2012.2234450     Document Type: Article

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