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Volumn 29, Issue 3, 2011, Pages

Dark current mechanisms in stabilized amorphous selenium based n-i detectors for x-ray imaging applications

Author keywords

[No Author keywords available]

Indexed keywords

A-SE DETECTORS; AMORPHOUS SELENIUM; ANALYTICAL MODEL; BARRIER HEIGHTS; BLOCKING LAYERS; CARRIER INJECTION; CURRENT BEHAVIORS; CURRENT MECHANISMS; DEEP HOLE TRAP; DIFFUSION THEORY; FIRST PRINCIPLES MODELS; HOLE INJECTION; LAYER INTERFACES; METAL CONTACTS; ORDERS OF MAGNITUDE; RELEASE TIME; SELECTION CRITERIA; STEADY-STATE BEHAVIORS; THERMAL GENERATION; TRAP CENTER; TRAP DEPTH; VALENCE BAND EDGES; X-RAY IMAGE DETECTORS; X-RAY PHOTOCONDUCTOR; XRAY IMAGING;

EID: 79955136107     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3580902     Document Type: Review
Times cited : (29)

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