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Applied Physics Letters

Volumn 95, Issue 1, 2009, Pages

Lateral metal-semiconductor-metal photodetectors based on amorphous selenium

(5) Wang, Kai a,b Chen, Feng a Belev, George c Kasap, Safa c Karim, Karim S a

a UNIVERSITY OF WATERLOO (Canada)

b Thunder Bay Regional Research Institute (Canada)

c UNIVERSITY OF SASKATCHEWAN (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SELENIUM; DIGITAL X-RAY IMAGING; FALL TIME; HIGH-SPEED; METAL SEMICONDUCTOR METAL PHOTODETECTOR; PHOTORESPONSE; RESPONSIVITY; RISETIME; SHORT WAVELENGTHS; TIME CONSTANTS;

ELECTRIC FIELDS; HETEROJUNCTIONS; METALS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SELENIUM;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 67650483312 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3173818 Document Type: Article

Times cited : (43)

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