Low dark-current lateral amorphous-selenium metal-semiconductor-metal photodetector

IEEE Electron Device Letters

Volumn 32, Issue 9, 2011, Pages 1263-1265

  Abbaszadeh, Shiva ^a   Allec, Nicholas ^a   Wang, Kai ^a   Karim, Karim S ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

Amorphous selenium (a Se); indirect conversion X ray imaging; metal semiconductor metal (MSM) photodetector

Indexed keywords

A-SE DETECTORS; AMORPHOUS SELENIUM; APPLIED BIAS; BLOCKING CONTACTS; CHEST RADIOGRAPHY; COMPUTED TOMOGRAPHY; DIGITAL X-RAY IMAGING; HIGH SIGNAL-TO-NOISE RATIO; INDIRECT CONVERSION X-RAY IMAGING; METAL SEMICONDUCTOR METAL PHOTODETECTOR; METAL-SEMICONDUCTOR-METAL DETECTORS; POLYIMIDE LAYERS; WIDE DYNAMIC RANGE;

COMPUTERIZED TOMOGRAPHY; DETECTORS; DIGITAL DEVICES; FADING (RADIO); FLUORESCENT SCREENS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; POLYIMIDES; RADIOLOGY; SELENIUM; SEMICONDUCTING SELENIUM COMPOUNDS; SIGNAL TO NOISE RATIO; TOMOGRAPHY; X RAY ANALYSIS; X RAY RADIOGRAPHY;

METALS;

EID: 80052030397     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2160327     Document Type: Article

References (10)

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