Origin of mechanical strain sensitivity of pentacene thin-film transistors

Organic Electronics

Volumn 14, Issue 5, 2013, Pages 1323-1329

  Scenev, V ^a   Cosseddu, P ^b,c   Bonfiglio, A ^b,c   Salzmann, I ^a   Severin, N ^a   Oehzelt, M ^d   Koch, N ^a,d   Rabe, J P ^a  

^a HUMBOLDT UNIVERSITY   (Germany)

^b UNIVERSITY OF CAGLIARI   (Italy)

^c CNR   (Italy)

^d HAHN MEITNER INSTITUT   (Germany)

Author keywords

Bending experiment; Morphology; OFET; Pentacene; Strain

Indexed keywords

CONDUCTING POLYMERS; DEFORMATION; DRAIN CURRENT; ELECTRODES; FIELD EFFECT TRANSISTORS; MORPHOLOGY; ORGANIC FIELD EFFECT TRANSISTORS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING ORGANIC COMPOUNDS; STRAIN; THIN FILM TRANSISTORS; THIN FILMS; X RAY DIFFRACTION;

BENDING EXPERIMENTS; FLEXIBLE ELECTRODES; MECHANICAL STRAIN; MORPHOLOGY AND STRUCTURES; ORGANIC THIN FILM TRANSISTORS; PENTACENE THIN FILM TRANSISTORS; PENTACENES; SYNCHROTRON X RAY DIFFRACTION;

THIN FILM CIRCUITS;

EID: 84875636258     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2013.02.030     Document Type: Article

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