Macroporous silicon solar cells with an epitaxial emitter

IEEE Journal of Photovoltaics

Volumn 3, Issue 2, 2013, Pages 723-729

  Ernst, Marco ^a   Brendel, Rolf ^a,b  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

Epitaxy; kerf free; layer transfer; macroporous silicon; thin films

Indexed keywords

APERTURE AREA; INNER SURFACES; KERF-FREE; LAYER TRANSFER; MACRO POROUS SILICON; MONOCRYSTALLINE; N TYPE SILICON; P-N JUNCTION;

EPITAXIAL GROWTH; OPEN CIRCUIT VOLTAGE; SILICON; SILICON SOLAR CELLS; SILICON WAFERS; THIN FILMS;

POROUS SILICON;

EID: 84875598305     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2013.2247094     Document Type: Article

References (23)

1. V. Lehmann, W. Ḧonlein, R. Stengl, J. Willer, and H. Wendt, "Verfahren zurHerstellung einer Solarzelle aus einer Substratscheibe, "German Patent DE 42 04 455 C1, 1992.
2. R. Brendel and M. Ernst, "Macroporous Si as an absorber for thin-film solar cells," Phys. Status Solidi RRL, vol. 4, pp. 40-42, 2010.
3. M. Ernst, R. Brendel, R. Ferŕe, and N.-P. Harder, "Thin macroporous silicon heterojunction solar cells," Phys. Status Solidi RRL, vol. 6, pp. 187-189, 2012.
4. M. Ernst and R. Brendel, "Large area macroporous silicon layers for monocrystalline thin-film solar cells," in Proc. 35th IEEE Photovoltaic Spec. Conf., 2010, pp. 3122-3124.
5. A. Cojocaru, J. Carstensen, E. K. Ossei-Wusu, M. Leisner, O. Riemenschneider, and H. F̈oll, "Fast macropore growth in n-type silicon," Phys. Status Solidi (c), vol. 6, pp. 1571-1574, 2009.
6. W.Kern and D. Puotinen, "Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor," RCA Rev., vol. 31, pp. 187-206, 1970.
7. M.Aven, J. Z. Devine,R. B.Bolon, andG. W. Ludwig, "Scanning electron microscopy and cathodoluminescence of ZnSex Te1?x p-n junctions," J. Appl. Phys., vol. 43, pp. 4136-4142, 1972.
8. B. Hoex, S. B. S. Heil, E. Langereis, M. C. M. van de Sanden, and W. M. M. Kessels, "Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3 ," Appl. Phys. Lett., vol. 89, pp. 042112-1-042112-3, 2006.
9. B. Hoex, J. Schmidt, R. Bock, P. P. Altermatt, M. C. M. van de Sanden, and W. M. M. Kessels, "Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3 ," Appl. Phys. Lett., vol. 91, pp. 112107-1-112107-3, 2007.
10. M. Ernst and R. Brendel, "Modeling effective carrier lifetimes of passivated macroporous silicon layers," Solar Energy Mater. Sol. Cells, vol. 95, pp. 1197-1202, 2011.
11. A. Cuevas and D.Macdonald, "Measuring and interpreting the lifetime of silicon wafers," Solar Energy, vol. 76, pp. 255-262, 2004. (Pubitemid 38047639)
12. J. L. van Hemmen, S. B. S. Heil, J. H. Klootwijk, F. Roozeboom, C. J. Hodson, M. C. M. van de Sanden, and W. M. M. Kessels, "Plasma and thermal ALD of Al2O3 in a commercial 200 mm ALD reactor," J. Electrochem. Soc., vol. 154, pp. G165-G169, 2007. (Pubitemid 46872260)
13. D. King and B. Hansen, "A sensitivity analysis of the spectral mismatch correction procedure using wavelength-dependent error sources (solar cell testing)," in Proc. 22nd IEEE Photovoltaic Spec. Conf., 1991, pp. 459-465.
14. M. Glatthaar, J. Haunschild, M. Kasemann, J. Giesecke, W. Warta, and S. Rein, "Spatially resolved determination of dark saturation current and series resistance of silicon solar cells," Phys. Status Solidi RRL, vol. 4, pp. 13-15, 2010.
15. D. Hinken, C. Schinke, S. Herlufsen, A. Schmidt, K. Bothe, and R. Brendel, "Experimental setup for camera-based measurements of electrically and optically stimulated luminescence of silicon solar cells and wafers," Rev. Sci. Instrum., vol. 83, pp. 033706-1-033706-9, 2011.
16. M. A. Green, Solar Cells: Operating Principles, Technology and System Applications. Sydney, Australia: Univ. New South Wales, 1998, p. 96.
17. N. Brinkmann, D. Ṕocza, E. J. Mitchell, and S.Reber, "3Depitaxial growth through holes for the fabrication of thin-film solar cells," J. Cryst. Growth, vol. 335, pp. 37-41, 2011.
18. S. A. Edmiston, G. Heiser, A. B. Sproul, and M. A. Green, "Improved modeling of grain boundary recombination in bulk and p-n junction regions of polycrystalline silicon solar cells," J. Appl. Phys., vol. 80, pp. 6783-6795, 1996. (Pubitemid 126544076)
19. O. Breitenstein, P. Altermatt, K. Ramspeck, M. Green, J. Zhao, and A. Schenk, "Interpretation of the commonly observed I-V characteristics of C-SI cells having ideality factor larger than two," in Proc. 4th IEEE World Conf. Photovoltaic Energy Conversion, 2006, pp. 879-884. (Pubitemid 351485132)
20. C.-t. Sah, R. Noyce, and W. Shockley, "Carrier generation and recombination in P-N junctions and P-N junction characteristics," Proc. IRE, vol. 45, no. 9, pp. 1228-1243, 1957.
21. R. K̈uhn, P. Fath, and E. Bucher, "Effects of pn-junctions bordering on surfaces investigated by means of 2D-modeling," in Proc. 22nd IEEE Photovoltaic Spec. Conf., 2000, pp. 116-119.
22. D. Meier and D. Schroder, "Contact resistance: Its measurement and relative importance to power loss in a solar cell," IEEE Trans. Electron Devices, vol. ED-31, no. 5, pp. 647-653, May 1984. (Pubitemid 14582436)
23. C. Mader, J. M̈uller, S. Eidelloth, and R. Brendel, "Local rear contacts to silicon solar cells by in-line high-rate evaporation of aluminum," Solar Energy Mater. Solar Cells, vol. 107, pp. 272-282, 2012.