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Volumn 95, Issue 4, 2011, Pages 1197-1202

Modeling effective carrier lifetimes of passivated macroporous silicon layers

Author keywords

Carrier lifetime; Carrier transport; Macroporous Si; Modeling; Porous Si

Indexed keywords

BULK LIFETIME; CRYSTALLINE SILICONS; LIFETIME MEASUREMENTS; MACRO POROUS SILICON; MACROPORES; MACROPOROUS; MACROPOROUS SI; MINORITY CARRIER LIFETIMES; MODELING; PORE DIAMETERS; PORE MORPHOLOGY; PORE SURFACE; POROUS SI; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES; THERMAL OXIDATION;

EID: 79951851024     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.01.017     Document Type: Article
Times cited : (12)

References (10)
  • 7
    • 79951852444 scopus 로고    scopus 로고
    • (validonJuly,27,2010)
    • 〈 http://www.comsol.com 〉 (valid on July, 27, 2010)
  • 9
    • 0030380311 scopus 로고    scopus 로고
    • Crystal-orientation dependence of surface recombination velocity for silicon nitride passivated silicon wafers
    • F.M. Schuurmans, A. Schnecker, J.A. Eikelboom, W.C. Sinke, Crystal-orientation dependence of surface recombination velocity for silicon nitride passivated silicon wafers, in: 25th IEEE PVSC, 1996, pp. 485488
    • (1996) 25th IEEE PVSC , pp. 485-488
    • Schuurmans, F.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.