Structure and electrical properties of Mn doped Bi(Mg 1/2 Ti 1/2 )O 3 -PbTiO 3 ferroelectric thin films

Applied Surface Science

Volumn 268, Issue , 2013, Pages 327-331

  Liu, Longdong ^a   Zuo, Ruzhong ^a   Sun, Qian ^a   Liang, Qi ^a  

^a HEFEI UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Electrical properties; Mn doping; Sol gel; Thin films

Indexed keywords

BISMUTH COMPOUNDS; DIELECTRIC LOSSES; ELECTRIC PROPERTIES; FERROELECTRIC FILMS; FERROELECTRIC THIN FILMS; LEAD TITANATE; MAGNESIUM COMPOUNDS; MANGANESE; MANGANESE COMPOUNDS; METALLIC FILMS; PEROVSKITE; SEMICONDUCTOR DOPING; SOL-GEL PROCESS; SOL-GELS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

MN SUBSTITUTION; MN-DOPING; PBTIO3 FERROELECTRIC; PEROVSKITE STRUCTURES; PT THIN FILMS; SATURATED HYSTERESIS LOOPS; X RAY PHOTOELECTRON SPECTRA; X-RAY DIFFRACTION DATA;

THIN FILMS;

EID: 84875465208     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.12.087     Document Type: Article

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