Effect of Mn doping on microstructure and electrical properties of the (Na0.85K0.15)0.5Bi0.5TiO 3 thin films prepared by sol-gel method

Journal of the American Ceramic Society

Volumn 94, Issue 11, 2011, Pages 3877-3882

  Wu, Yunyi ^a   Wang, Xiaohui ^a   Zhong, Caifu ^a   Li, Longtu ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FIELD; DIELECTRIC RESPONSE; EFFECT OF MN; FERROELECTRIC MEASUREMENTS; FERROELECTRIC PROPERTY; IMPURITY PHASE; MAXIMUM VALUES; MN CONTENT; MN OXIDES; MN SUBSTITUTION; MN-DOPED; MN-DOPING; PEROVSKITE STRUCTURES; PIEZOELECTRIC RESPONSE; PT(111); RAMAN MODES; REMNANT POLARIZATIONS; TIO;

CONCENTRATION (PROCESS); DIELECTRIC LOSSES; ELECTRIC PROPERTIES; FERROELECTRIC FILMS; FERROELECTRICITY; GELS; MANGANESE; MICROSTRUCTURE; OXYGEN VACANCIES; PEROVSKITE; PLATINUM; POLARIZATION; RAMAN SPECTROSCOPY; SODIUM; SOL-GEL PROCESS; SOL-GELS; SOLS; THIN FILMS; X RAY DIFFRACTION;

SEMICONDUCTOR DOPING;

EID: 80255137014     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2011.04576.x     Document Type: Article

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