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Volumn 117, Issue 11, 2013, Pages 5584-5592

Effect of Al2O3 recombination barrier layers deposited by atomic layer deposition in solid-state CdS quantum dot-sensitized solar cells

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT-VOLTAGE MEASUREMENTS; DEVICE PERFORMANCE; DYE-SENSITIZED SOLAR CELL; ELECTRON LIFETIME; HOLE TRANSPORT MATERIALS; QUANTUM DOT-SENSITIZED SOLAR CELLS; THIN BARRIER LAYERS; TRANSIENT PHOTOVOLTAGE MEASUREMENTS;

EID: 84875459048     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp311846r     Document Type: Article
Times cited : (111)

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