Enhanced performance of dye-sensitized solar cells by an Al 2O3 charge-recombination barrier formed by low-temperature atomic layer deposition

Journal of Materials Chemistry

Volumn 19, Issue 19, 2009, Pages 2999-3003

  Lin, Ching ^a   Tsai, Feng Yu ^a   Lee, Min Hsueh ^b   Lee, Chia Hua ^b   Tien, Ta Chang ^c   Wang, Lih Ping ^b   Tsai, Song Yeu ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALD PRECURSORS; ATOMIC-LAYER DEPOSITIONS; CHARGE RECOMBINATIONS; DYE MOLECULES; DYE-SENSITIZED SOLAR CELLS; ELECTRODE SURFACES; ENHANCED PERFORMANCE; GRAPHICAL MODELS; LOW TEMPERATURES; NANOPOROUS TIO; NOMINAL THICKNESS; OPTIMAL THICKNESS; POWER-CONVERSION EFFICIENCIES; STERIC HINDRANCES; THICKNESS DEPENDENCES; THICKNESS RESOLUTIONS; ULTRA-VIOLET PHOTOELECTRON SPECTROSCOPIES;

ALUMINUM; ATOMS; CELL MEMBRANES; CHEMICAL REACTIONS; CONVERSION EFFICIENCY; FILM GROWTH; GELATION; GRAPHIC METHODS; PHOTOELECTROCHEMICAL CELLS; PHOTOELECTRON SPECTROSCOPY; PHOTOVOLTAIC CELLS; POWER SUPPLY CIRCUITS; SOL-GEL PROCESS; SOLAR CELLS; SOLAR ENERGY; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; ULTRAVIOLET SPECTROSCOPY;

ATOMIC LAYER DEPOSITION;

EID: 65549130043     PISSN: 09599428     EISSN: 13645501     Source Type: Journal    
DOI: 10.1039/b819337a     Document Type: Article

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