CdSe-sensitized p-CuSCN/nanowire n-ZnO heterojunctions

Advanced Materials

Volumn 17, Issue 12, 2005, Pages 1512-1515

  Lévy Clément, Claude ^a   Tena Zaera, Ramon ^a,b   Ryan, Margaret A ^a,c   Katty, Abou ^a   Hodes, Gary ^a,d  

^a CNRS   (France)

^b UNIVERSITY OF VALENCIA   (Spain)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^d WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; CRYSTALLINE MATERIALS; CURRENT DENSITY; ELECTRON TRANSITIONS; FABRICATION; HETEROJUNCTIONS; NANOSTRUCTURED MATERIALS; OPTOELECTRONIC DEVICES; PHOTOVOLTAIC CELLS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING CADMIUM COMPOUNDS; SOLAR CELLS; TITANIUM DIOXIDE; ZINC OXIDE;

CADMIUM SELENIDE; EXTREMELY THIN ABSORBERS (ETA); NANOWIRES; TRANSIENT PHOTOVOLTAGE DECAY;

COPPER COMPOUNDS;

EID: 20644461244     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200401848     Document Type: Article

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