메뉴 건너뛰기




Volumn 19, Issue 21, 2007, Pages 3643-3647

Electron and hole transport through mesoporous TiO2 infiltrated with spiro-MeOTAD

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRON TRANSITIONS; FILM THICKNESS; HOLE MOBILITY; INFILTRATION;

EID: 36248956660     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200602085     Document Type: Article
Times cited : (170)

References (40)
  • 8
    • 36248955575 scopus 로고    scopus 로고
    • 2 is transparent to visible light and it is easily verified when a titanium film has been completely oxidized. By sputtering films of various thickness, and exposing these films to the standard device fabrication processes, we have found that the metal becomes completely oxidized when the film is thinner than approximately 80 nm.
    • 2 is transparent to visible light and it is easily verified when a titanium film has been completely oxidized. By sputtering films of various thickness, and exposing these films to the standard device fabrication processes, we have found that the metal becomes completely oxidized when the film is thinner than approximately 80 nm.
  • 10
    • 36248978190 scopus 로고    scopus 로고
    • -2 to be approximately 65 Ω. The series resistance through the FTO in our device configuration is approximately 8 Ω. So the cell is approaching but still some way off RC limitations at the highest light intensities.
    • -2 to be approximately 65 Ω. The series resistance through the FTO in our device configuration is approximately 8 Ω. So the cell is approaching but still some way off RC limitations at the highest light intensities.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.