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Demonstration of Integrated Micro-Electro-Mechanical Switch Circuits for VLSI Applications
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F. Chen, M. Spencer, R. Nathanael, C. Wang, H. Fariborzi, A. Gupta, H. Kam, V. Pott, J. Jeon, T.-J. King Liu, D. Markovic, V. Stojanovic, and E. Alon, “Demonstration of Integrated Micro-Electro-Mechanical Switch Circuits for VLSI Applications”, IEEE ISSCC 2010, pp. 150-152.
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50249113248
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Design Considerations for Complementary Nanoelectromechanical Logic Gates
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K. Akarvardar, D. Elata, R. Parsa, G. C. Wan, K. Yoo, J Provine, P. Peumans, R. T. Howe, and H.–S. P. Wong, “Design Considerations for Complementary Nanoelectromechanical Logic Gates”, IEDM 2007, pp. 299-302.
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76349113814
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Nanoelectromechanical (NEM) Relays Integrated with CMOS SRAM for Improved Stability and Low Leakage
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S. Chong, K. Akarvardar, R. Parsa, J.-B. Yoon, R. T. Howe, S. Mitra, and H.-S. P. Wong, “Nanoelectromechanical (NEM) Relays Integrated with CMOS SRAM for Improved Stability and Low Leakage”, ICCAD 2009, pp. 478-484.
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ICCAD
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Chong, S.1
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77951588072
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Efficient FPGAs using Nanoelectromechanical Relays
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C. Chen, R. Parsa, N. Patil, S. Chong, K. Akarvardar, J. Provine, D. Lewis, J. Watt, R. T. Howe, H.-S. P. Wong, and S. Mitra, “Efficient FPGAs using Nanoelectromechanical Relays”, ACM Intl. Symp. FPGA 2010, pp. 273-282.
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Chen, C.1
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70350627423
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A Nanoelectromechanical Switch for Integration with CMOS Logic
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D. A. Czaplewski, G. A. Patrizi, G. M. Kraus, J. R. Wendt, C. D. Nordquist, S. L. Wolfley, M. S. Baker, and M. P. de Boer “A Nanoelectromechanical Switch for Integration with CMOS Logic”, Journal of Micromechanics and Microengineering, vol. 19, 2009.
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Czaplewski, D.A.1
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50849092503
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NEMS switch with 30 nm-thick beam and 20 nm-thick air-gap for high density non-volatile memory applications
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W. W. Jang, J.-B. Yoon, M.-S. Kim, J.-M. Lee, S.-M. Kim, E.-J. Yoon, K. H. Cho, S.-Y. Lee, I.-H. Choi, D.-W. Kim, and D. Park, “NEMS switch with 30 nm-thick beam and 20 nm-thick air-gap for high density non-volatile memory applications", Solid State Electronics 2008, pp. 1578-1583.
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Jang, W.W.1
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77951612729
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3-T Nanoelectromechanical Switching Device in Insulating Liquid Media for Low Voltage Operation and Reliability Improvement
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J.-O. Lee, M.-W. Kim, S.-D. Ko, H.-O. Kang, W.-H. Bae, M.-H. Kang, K.-N. Kim, D.-E. Yoo, and J.-B. Yoon, “3-T Nanoelectromechanical Switching Device in Insulating Liquid Media for Low Voltage Operation and Reliability Improvement”, IEDM 2009, pp. 227-230.
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77952775773
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Atomic layer deposition (ALD) Tungsten nanoelectromechanical transistors
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B.D. Davidson, S.M. George, and V.M. Bright, “Atomic layer deposition (ALD) Tungsten nanoelectromechanical transistors”, Proc. IEEE MEMS 2010, pp. 424-427.
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Davidson, B.D.1
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77952779203
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Demonstration of low voltage and functionally complete logic operations using body-biased complementary and ultra-thin AlN piezoelectric mechanical switches
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N. Sinha, T. Jones, Z. Guo, and G. Piazza, “Demonstration of low voltage and functionally complete logic operations using body-biased complementary and ultra-thin AlN piezoelectric mechanical switches”, Proc. IEEE MEMS 2010, pp. 751-754.
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Sinha, N.1
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4243100605
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Selecting metal alloy electric contact materials for MEMS switches
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R. A. Coutu, Jr, P. E. Kladitis, K. D. Leedy, and R. L. Crane, “Selecting metal alloy electric contact materials for MEMS switches”, Journal of Micromechanical Microengineering, 2004, 1157-1164.
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77952415045
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Design and Reliability of a Micro-Relay Technology for Zero-Standby-Power Digital Logic Applications
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H. Kam, V. Pott, R. Nathanael, J. Jeon, E. Alon, and T.-J. King Liu “Design and Reliability of a Micro-Relay Technology for Zero-Standby-Power Digital Logic Applications”, IEDM 2009, pp. 809-812.
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77952748531
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Titanium Nitride Sidewall Stringer Process for Lateral Nanoelectromechanical Relays
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D. Lee, W. S. Lee, J. Provine, J.-O. Lee, J.-B. Yoon, R. T. Howe, S. Mitra, and H.–S. P. Wong, “Titanium Nitride Sidewall Stringer Process for Lateral Nanoelectromechanical Relays”, Proc. IEEE MEMS 2010, pp. 456-459.
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Lee, D.1
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Mitra, S.7
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