Blue light emission from the heterostructured ZnO/InGaN/GaN

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages 1-5

  Wang, Ti ^a   Wu, Hao ^a   Wang, Zheng ^a   Chen, Chao ^a   Liu, Chang ^a  

^a WUHAN UNIVERSITY   (China)

Author keywords

Atomic layer deposition; Electroluminescence; ZnO InGaN GaN heterostructures

Indexed keywords

ATOMIC LAYER DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RECTIFIERS; ELECTROLUMINESCENCE; GALLIUM ALLOYS; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; LIGHT; LIGHT EMITTING DIODES; MAGNESIUM ALLOYS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR ALLOYS; SILICON ALLOYS; ZINC OXIDE;

BLUE EMISSION; BLUE LIGHT EMISSIONS; ELECTROLUMINESCENCE SPECTRA; EMISSION INTENSITY RATIO; EMISSION PEAKS; FORWARD BIAS; RECTIFICATION BEHAVIOR; REVERSE BIAS;

INDIUM ALLOYS;

EID: 84875141349     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-99     Document Type: Article

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