Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor

Sensors and Actuators, A: Physical

Volumn 194, Issue , 2013, Pages 247-251

  Le Boulbar, E D ^a   Edwards, M J ^a,b   Vittoz, S ^c   Vanko, G ^d   Brinkfeldt, K ^e   Rufer, L ^c   Johander, P ^e   Lalinsky T ^d   Bowen, C R ^a   Allsopp, D W E ^a  

^a University of Bath   (United Kingdom)

^b University of Bath   (United Kingdom)

^c TIMA LABORATORY   (France)

^d INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^e SWEREA IVF   (Sweden)

Author keywords

AlGaN GaN; HEMT; Piezoelectric; Stress sensor

Indexed keywords

ALGAN/GAN; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; ALGAN/GAN HIGHELECTRON-MOBILITY TRANSISTORS (HEMTS); EXPONENTIAL DEPENDENCE; PIEZOELECTRIC; PRESSURE SENSITIVE; PRESSURE SENSITIVITIES; STRESS SENSOR;

ATMOSPHERIC PRESSURE; DIAPHRAGMS; ELECTRON GAS; GALLIUM NITRIDE; SENSORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84875128666     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2013.02.017     Document Type: Article

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